On the microscopic structures of shallow donors in 6H SiC: studies with EPR and ENDOR

Greulich‐Weber, S.; Feege, M; Spaeth, J.‐M.; Kalabukhova, Ekaterina N.; Лукин, С. Н.; Мохов, Е. Н.

doi:10.1016/0038-1098(94)00805-1

Cited by 38 publications

(24 citation statements)

References 6 publications

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“…Several ESE observer positions have been selected for the ENDOR experiments in order to distinguish between ENDOR responses from the overlapping ESE signals of the nitrogen donors N c1 , N c2 , N h and N x . All ENDOR spectra show intense 14 N ENDOR signals of N c1 , N c2 centers at frequencies higher than 15 MHz [8]. With B set at the central triplet lines of the centers N c1 , N c2 (Fig.…”

Section: (B)mentioning

confidence: 98%

“…Tacking into account the slightly different hf couplings of the nitrogen centers at cubic sites as determined from the Q-band FS ESE experiments ( electron spin manifold m S = +1 of the N h center [14]. The hf and nuclear quadrupole (nq) parameters of the centers N c1 , N c2 and N h were determined from a complete angular dependence (not shown).…”

Section: (B)mentioning

confidence: 99%

“…5 compares the spectra obtained for B ⊥ c and B || c. These measurements revealed a number of 29 Si and 13 C ENDOR resonances in the frequency range between 2 MHz and 15 MHz among them again those of Si(I) and C(I). The ENDOR lines below 6 MHz have already been analyzed in detail [8,9,14]. However in…”

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confidence: 99%

“…In previous papers [8,9,11,14] the measured 29 Si and 13 C shf couplings for both polytypes 6H-and 4H-SiC have been interpreted in terms of spin density contributions in the s and p atomic orbitals of the considered silicon or carbon lattice atom. In that way information about the electronic wave function of the shallow N donors were derived.…”

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confidence: 99%

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Spin‐coupling and hyperfine interaction of the nitrogen donors in 6H‐SiC

Савченко

Kalabukhova

Kiselev

et al. 2009

Physica Status Solidi (b)

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The X‐, Q‐band field‐sweep electron spin echo (FS ESE) study of n‐type 6H‐SiC wafers shows besides the well known hyperfine (hf) triplet lines of 14N on two quasi‐cubic (Nc1, Nc2) and hexagonal (Nh) sites additional triplet lines (Nx) of comparatively low intensity with a g ‐tensor of about the average value of the Nc2 and Nh spectrum at 4.2 K. The Nx triplet has half of the hf splitting with respect to the nitrogen residing at cubic sites Nc2. Pulsed electron nuclear double resonance (ENDOR) measurements performed on the Nx EPR triplet line demonstrate that there is an efficient spin‐coupling between Nh and Nx nitrogen related centers. The Nx triplet lines were attributed to distant donor Nc–Nh pairs between nitrogen atoms residing at quasi‐cubic and hexagonal sites having a total electron spin S = 1, which were found before in n‐type 4H‐SiC. Based on Q‐band FS ESE and X‐band pulsed ENDOR measurements the values of the hf interaction for Nc1, Nc2 were reassigned with respect to the assignment accepted hitherto.The super hyperfine (shf) interaction with neighboring atoms of nitrogen on the quasi‐cubic lattice sites was studied by FS ESE and pulsed ENDOR. The new shf lines due to 29Si and 13C atoms with large shf interaction which were not observed previously were found in nitrogen FS ESE and ENDOR spectra. One of them, with the largest shf splitting (23.12 MHz), were attributed to the 29Si atoms along the c‐axis in nearest‐neighbor positions of nitrogen on the quasi‐cubic sites which unambiguously confirms that nitrogen substitute carbon lattice site in 6H‐SiC. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: (B)mentioning

confidence: 98%

Section: (B)mentioning

confidence: 99%

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confidence: 99%

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Spin‐coupling and hyperfine interaction of the nitrogen donors in 6H‐SiC

Савченко

Kalabukhova

Kiselev

et al. 2009

Physica Status Solidi (b)

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“…On the other hand, P has a higher solubility limit in the SiC lattice and a higher electron mobility at high doses with respect to N. Electron-spin resonance experiments indicate that N is most favorably substituted at a C sublattice site, 1 while P is most likely to substitute at a Si sublattice site. 2 This fact, together with the observation that N and P donors have similar ionization energies, 3 suggested that codoping of SiC with both N and P could maximize the doping efficiency, resulting in an overall increase in the dopant activation rate. Laube et al 4 have reported comparative Hall effect measurements implanting N and P, and coimplanting the two at three different doses.…”

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First-principles study of n-type dopants and their clustering in SiC

Rurali

Godignon

Rebollo

et al. 2003

Applied Physics Letters

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We report the results of an ab initio study of N and P dopants in SiC. We find that while N substitutes most favorably at a C lattice site, P does so preferably at a Si site, except in n-doping and Si-rich 3C-SiC. Furthermore, we consider a series of dopant complexes that could form in high-dose implantation, in order to investigate the dopant activation behavior in this limit. We find that all N complexes considered lead to passivation through the formation of a deep level. For P, the most stable aggregate is still an active dopant, while passivation is only observed for complexes with a higher formation energy. We discuss how these results could help in the understanding of the observed experimental high-dose doping and codoping behavior of these species.

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Optical Characterization of Silicon Carbide Polytypes

Devaty

Choyke

1997

phys. stat. sol. (a)

110

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This article is a review of recent progress in our understanding of the optical properties of the important polytypes of SiC: 3C, 4H, 6H, and 15R. We focus on experimental work but also compare results obtained by experiment with theory. The topics of emphasis are: 1. vacuum ultraviolet reflectivity, 2. free excitons, 3. spectroscopy of shallow donors and acceptors, 4. the impurity boron in SiC, 5. the rare earth impurity erbium in SiC, and 6. optical properties of porous SiC.

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On the microscopic structures of shallow donors in 6H SiC: studies with EPR and ENDOR

Cited by 38 publications

References 6 publications

Spin‐coupling and hyperfine interaction of the nitrogen donors in 6H‐SiC

Spin‐coupling and hyperfine interaction of the nitrogen donors in 6H‐SiC

First-principles study of n-type dopants and their clustering in SiC

Optical Characterization of Silicon Carbide Polytypes

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