On the microscopic structure of hole traps in pMOSFETs

Grasser, T.; Goes, Wolfgang; Wimmer, Yannick; Schanovsky, F.; Rzepa, G.; Waltl, Michael; Rott, Karsten; Reisinger, H.; Afanas’ev, Valery V.; Stesmans, André; El-Sayed, Al-Moatasem; Shluger, AL

doi:10.1109/iedm.2014.7047093

Cited by 70 publications

(51 citation statements)

References 5 publications

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“…A large number of precursor sites and defect candidates are in principle conceivable and have also been studied in literature. However, from all the defect candidates we have investigated so far [23], the hydroxyl E center appears to be most consistent with experiment.…”

Section: Defect Creation Vs Activationsupporting

confidence: 74%

“…Also, in our previous DFT studies [12,23] where we compared theoretical predictions to TDDS experiments, we have identified hydrogen-related E -centers as interesting defect candidates. One of these candidates, the hydroxyl E -center [30], is shown in Fig.…”

Section: Discussionmentioning

confidence: 92%

“…According to these DFT calculations, see Fig. 15, atomic hydrogen can spontaneously passivate the dangling Si bond at the hydroxyl E -center [23]. Although this process could in principle be diffusion-limited if the barriers for the hydrogendefect reactions are small, reported diffusion constants of H and H 2 are so large [31] that it is unlikely that such cases can be resolved experimentally.…”

Section: Discussionmentioning

confidence: 96%

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On the volatility of oxide defects: Activation, deactivation, and transformation

Grasser

Wahl

Goes

et al. 2015

2015 IEEE International Reliability Physics Symposium

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Recent studies have clearly shown that oxide defects are more complicated than typically assumed in simple twostate models, which only consider a neutral and a charged state. In particular, oxide defects can be volatile, meaning that they can be deactivated and re-activated at the same site with the same properties. In addition, these defects can transform and change their properties. The details of all these processes are presently unknown and poorly characterized. Here we employ time-dependent defect spectroscopy (TDDS) to more closely study the changes occurring at the defect sites. Our findings suggest that these changes are ubiquitous and must be an essential aspect of our understanding of oxide defects. Using density-functionaltheory (DFT) calculations, we propose hydrogen-defect interactions consistent with our observations. Our results suggest that standard defect characterization methods, such as the analysis of random telegraph noise (RTN), will typically only provide a snapshot of the defect landscape which is subject to change anytime during device operation.

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Section: Defect Creation Vs Activationsupporting

confidence: 74%

Section: Discussionmentioning

confidence: 92%

Section: Discussionmentioning

confidence: 96%

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On the volatility of oxide defects: Activation, deactivation, and transformation

Grasser

Wahl

Goes

et al. 2015

2015 IEEE International Reliability Physics Symposium

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“…At the same time, this is considerably lower than for MoS 2 /SiO 2 and Si/high-k devices, in which D ot can exceed 10 20 cm −3 eV −1 . Although at T = 165°C D ot increases, the obtained values (~10 19 cm −3 eV −1 ) remain reasonable. The possible reasons for the comparably small D ot values in our BPFETs are the following: First, optimization of the device processing conditions allowed us to reduce the number of those process-induced defects which can contribute to charge trapping.…”

Section: Resultsmentioning

confidence: 50%

“…13,15 The stability and reliability of all 2D transistors investigated so far is reduced by charge trapping in oxide traps [16][17][18] with very broad distributions of time constants. 19 This presents one of the main road blocks towards commercialization of 2D technologies. In its most obvious form, charge trapping results in a hysteresis, which is typically observed on the gate transfer characteristics.…”

Section: Black Phosphorus (Bp) Is a Crystalline Two-dimensional (2d)mentioning

confidence: 99%

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

et al. 2017

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Black phosphorus is considered a very promising semiconductor for two-dimensional field-effect transistors. Initially, the main disadvantage of this material was thought to be its poor air stability. However, recent studies have shown that this problem can be solved by suitable encapsulation. As such, long-term studies of the outstanding properties of black phosphorus devices have become possible. In particular, here we examine highly-stable black phosphorus field-effect transistors and demonstrate that they can exhibit reproducible characteristics for at least 17 months. Furthermore, we notice some improvement in the performance of black phosphorus devices after this long time, i.e., positive aging. Although our black phosphorus devices are stable at room temperature, we show that their performance is affected by thermally activated charge trapping by oxide traps into the adjacent SiO 2 substrate layer. Aiming to analyze the dynamics of these defects in detail, we perform an accurate mapping of oxide traps with different time constants using the 'extended incremental hysteresis sweep method'. Our results show that at room temperature the extracted oxide trap densities are (i) few orders of magnitude lower than for MoS 2 /SiO 2 transistors and (ii) close to those reported for more mature Si/SiO 2 devices (~10 17 cm). Taking into account the novelty of black phosphorus and recent issues with its stability, these values must be considered unexpectedly low.

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Origins of 1/f Noise in Electronic Materials and Devices: A Historical Perspective

Fleetwood

2020

Noise in Nanoscale Semiconductor Devices

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On the microscopic structure of hole traps in pMOSFETs

Cited by 70 publications

References 5 publications

On the volatility of oxide defects: Activation, deactivation, and transformation

On the volatility of oxide defects: Activation, deactivation, and transformation

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

Origins of 1/f Noise in Electronic Materials and Devices: A Historical Perspective

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