On the mechanisms of current transfer in n-In2Se3-p-GaSe heterostructures

Facile Synthesis of γ‐In2Se3 Nanoflowers toward High Performance Self‐Powered Broadband γ‐In2Se3/Si Heterojunction Photodiode

“…Here, E g1 is the bandgap of n ‐Si (1.12 eV) and E g2 is the bandgap of γ‐In 2 Se 3 (1.78 eV). According to the previous reports, the electron affinity for Si and γ‐In 2 Se 3 is 4.05 and 3.60 eV, thus producing conduction and valence band offsets of 0.45 and 0.21 eV, respectively. For the heterojunction structure, a depletion region is formed on both Si and γ‐In 2 Se 3 sides by carrier diffusion, leading to the creation of a built‐in electric field at the γ‐In 2 Se 3 /Si interface.…”

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

“…As responsivity saturates at higher incident power, indicating that it is indeed limited because of saturation of photocurrent at higher powers due to traps and impurities present in GaN and heterointerface. [11][36][37] At higher incident power traps capture generated excess photo carriers (electrons or holes depending upon nature of traps). There would always be availability of enough excess generated photo carriers to keep these traps in filled position, causing reduction in number of photogenerated carriers.…”

“…Several groups have reported layered material (LM) based heterojunctions, LM/3D heterojunctions towards multifunctional device applications, most of which emphasize on diode-like applications with vertical current transport and single band photodetection. [9][10] [11] However, study of heterojunctions between layered materials and conventional 3D semiconductors for dual-band photodetection are at nascent stage, especially heterojunctions combining direct bandgap layered materials and wide bandgap semiconductors for extreme bandgap engineering toward optoelectronic devices. For example, MoS2, which is one of the most widely studied layered materials, has been primarily investigated for single band photodetection.…”

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

“…5 . When a 3R MoS 2 flake (with an indirect band gap of 1.29 eV and a higher electron affinity of 4.0 eV) is in contact with an α-In 2 Se 3 flake (having a direct band gap of 1.55 eV and a lower electron affinity of 3.6 eV) [ 31 , 41 – 45 ], a negative (positive) space charge region in the 3R MoS 2 (α-In 2 Se 3 ) flake is established, forming a p-n heterojunction in the thermal equilibrium under zero strain. The widths of the depletion region located in 3R MoS 2 and α-In 2 Se 3 sides can be estimated using the depletion model for a conventional p–n heterostructure, i.e.…”