On the mechanism of porous silicon formation

Goryachev, D. N.; Belyakov, L. V.; Sreseli, O. M.

doi:10.1134/1.1309429

Cited by 20 publications

(8 citation statements)

References 18 publications

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“…If this parameter obeys the power law, we have (3) where α and τ are positive parameters. With allowance for (3), expression (2) can be written as (4) Expression (4) is referred to as the Kohlrausch or stretched exponential function; it is widely used to…”

Section: Resultsmentioning

confidence: 99%

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Kinetics of crack formation in porous silicon

Гаев

Рехвиашвили

2012

Semiconductors

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Section: Resultsmentioning

confidence: 99%

“…Porous silicon can be considered a solid state skel eton formed of thin filaments several nanometers thick [3]. These filaments coalesce to form local compact skeletal structures and voids; the latter are observed as cracks.…”

Section: Resultsmentioning

confidence: 99%

Kinetics of crack formation in porous silicon

Гаев

Рехвиашвили

2012

Semiconductors

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“…The pores mainly contain silicon oxides; the fraction of the oxide phase decreases with the increasing dis tance from the surface of the porous layer to the bulk [6]. The smallest nanosize silicon crystallites are located near the surface of the por Si film [7]. The permittivity ε eff of the por Si layer was estimated using…”

Section: Peculiarities Of the Capacitance-voltage Characteristic Of Amentioning

confidence: 99%

Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon p-n junction with a porous silicon antireflection coating

Tregulov

2014

Tech. Phys.

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The application of thin porous silicon (por Si) films as an antireflection coating of the frontal surface of traditional photoelectric convertors (PECs) of solar energy was considered by many authors. It has been shown convincingly that the application of por Si makes it possible to increase the efficiency of solar energy conversion. At the same time, the electrophys ical properties of such PECs have not been studied comprehensively.In this communication, we report on the results of analysis of a high frequency capacitance-voltage (C-V) characteristic of a silicon PEC based on the n + -p junction with a thin por Si film on the n + surface.The structure under investigation is based on the n + -p junction formed by diffusion of phosphorus. The substrate was a silicon single crystal of solar cell qual ity with the p type conductivity, with the (100) orien tation of the surface, and a resistivity of 1 Ω cm. The depth of the n + -p junction was 0.5 μm. The por Si film was grown on the surface of the n + layer by electro chemical anode etching. We investigated a PEC with a 0.4 μm thick por Si film. As shown in our previous pub lication [1], such a thickness of the por Si layer is optimal from the standpoint of the PEC efficiency. Indium con tacts were formed for measurements in the p region of the structure and on the por Si surface.The C-V characteristics were measured by an E7 20 immitance meter for a test signal frequency of 1 MHz at a temperature of 300 K. We tested a batch of ten identical samples with almost identical C-V charac teristics. A typical high frequency C-V curve for the tested batch of samples is shown in the figure. The polarity of a constant bias voltage U applied to the structure is determined by the sign of the voltage at a contact with por Si.The characteristic shown in the figure differs from that for an n + -p diode (initial structure) for which the capacitance minimum must be observed in the region of positive bias voltages.The resultant C-V curve (see figure) is typical of the metal-insulator-semiconductor (MIS) structure based on a semiconductor with n type conductivity. The regime of accumulation of the majority charge carriers is observed in the region of positive voltages. The depletion also begins for high positive voltages (see figure). For a negative bias voltage, deep depletion takes place. The local peak near U = 0 V is associated with the effect of surface states [3]. The voltage of pla nar regions is strongly shifted to the range of positive values, which can be explained by the effect of a nega tive charge in the insulator layer [3].Abstract-Experimental results on the high frequency capacitance-voltage characteristic of a photoelectric solar energy converter based on the n + -p junction with a thin porous silicon film on the frontal surface are considered. It is shown that the capacitance-voltage characteristic is determined by the surface metal-insu lator-semiconductor (MIS) structure formed as a result of growing of a porous silicon layer by electrochem ical anode etching. The ...

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“…The electrical resistivity distribution pattern over the porous layer surface is directly related to the electric field propagation in the electrolyte and at the silicon/electrolyte boundary. Porosity formation in silicon structures during chemical and electrochemical etching has been simulated using a large number of models providing, to different extents, sufficient explanation of the physical regularities of this phenomenon [1][2][3][4][5][6]. There are several physical models [4][5][6][7][8][9] interpreting some porosity formation aspects from the standpoints of instability of the planar silicon/ electrolyte boundary against small periodical disturbance under electrochemical etching conditions and anode current localization at the concave bottom surfaces of the growing pores.…”

Section: Introductionmentioning

confidence: 99%

“…Porosity formation in silicon structures during chemical and electrochemical etching has been simulated using a large number of models providing, to different extents, sufficient explanation of the physical regularities of this phenomenon [1][2][3][4][5][6]. There are several physical models [4][5][6][7][8][9] interpreting some porosity formation aspects from the standpoints of instability of the planar silicon/ electrolyte boundary against small periodical disturbance under electrochemical etching conditions and anode current localization at the concave bottom surfaces of the growing pores. In turn, chemical models concentrate on the explanation of the effective silicon valence and hydrogen release mechanisms accompanying the transfer of silicon atoms to the electrolyte from the surface layer [10,11].…”

Section: Introductionmentioning

confidence: 99%

Contact and contactless porous silicon parameter measurement techniques

Latukhina¹,

Kobeleva²,

Rogozhina³

et al. 2018

MoEM

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In this work we have used contact and contactless techniques to measure the electrical resistivity of single crystal silicon wafers with porous layers of variable thickness synthesized on the surface. The porous layers have been synthesized on the surfaces of single crystal wafers with well pronounced microroughness pattern, either textured or grinded. We have used the classic four-probe method with a linear probe arrangement as the contact measurement technique, and the resonance microwave method based on microwave absorption by free carriers as the contactless measurement technique. Electrical resistivity distribution over the specimen surface has been mapped based on the measurement results. We have demonstrated a general agreement between the electrical resistivity distribution patterns as measured using the contact and contactless measurement techniques. To analyze the electrical resistivity scatter over the specimen surface area we have simulated the field distribution in the electrolyte during porous layer formation in a non-planar anode cell. The regularities of the electrical resistivity spatial distribution in different types of specimens are accounted for by specific porosity formation mechanisms which in turn are controlled by the initial microroughness pattern and the field distribution pattern in the electrolyte for each specific case.

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On the mechanism of porous silicon formation

Cited by 20 publications

References 18 publications

Kinetics of crack formation in porous silicon

Kinetics of crack formation in porous silicon

Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon p-n junction with a porous silicon antireflection coating

Contact and contactless porous silicon parameter measurement techniques

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