On the low-temperature nucleation and growth of bubbles by helium bombardment of metals

Baskes, M. I.; Fastenau, R. H. J.; Penning, Paul; Caspers, L.M.; Veen, A. van

doi:10.1016/0022-3115(81)90490-6

Cited by 50 publications

(10 citation statements)

References 34 publications

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“…A thermal mechanisms associated with displacements of helium atoms by self interstitials may be present at low temperatures [10]. It is generally believed [10,11] that diffusing helium rapidly clusters to form an evolving population of bubbles; these bubbles act as biased sinks for point defect fluxes.…”

Section: Introductionmentioning

confidence: 99%

The effects of helium on irradiation damage in single crystal iron

Deo

Okuniewski

Srivilliputhur

et al. 2007

Journal of Nuclear Materials

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Section: Introductionmentioning

confidence: 99%

The effects of helium on irradiation damage in single crystal iron

Deo

Okuniewski

Srivilliputhur

et al. 2007

Journal of Nuclear Materials

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“…Due to insolubility of helium in metals, helium implantation into metal can easily induce helium bubble formation [4][5][6]. Helium desorption behavior is largely dependent on bubble growth and burst-out [7][8][9], which are related to irradiation ion energy, temperature and fluence.…”

Section: Introductionmentioning

confidence: 99%

Thermal desorption and surface modification of He+ implanted into tungsten

Zhang

Yoshida

Iwakiri

et al. 2004

Journal of Nuclear Materials

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“…Possible mecha- nisms for the removal of matrix atoms are (1) removal of atoms by thermal or irradiation induced vacancies (selfdiffusion); (2) transport of matrix atoms along dislocation cores ("conservative climb"); (3) thermal or irradiation induced emission of SIAs and transport through the bulk; (4) emission and gliding away of dislocation loops due to repulsion by the overpressurized cluster ("loop punching") [19]. Diffusion measurements show that in SiC the first process takes off only above 2000 K [20,21].…”

mentioning

confidence: 99%

Evolution of Helium Platelets and Associated Dislocation Loops inα-SiC

1999

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Implantation of 2450 at. ppm helium into silicon carbide at room temperature results in the formation of helium platelets with surprisingly uniform diameters about 9 nm, remaining constant upon annealing up to 1270 K. Estimation of the pressure in the platelets suggests the presence of solid helium even above ambient temperature. The narrow size distribution and the limitation of growth of the platelets is attributed to their trapping by circular dislocation dipoles forming close to their rim when they reach a critical size. Upon annealing to ഠ1500 K, the platelets disintegrate into disks of bubbles and, attached to them, interstitial-type dislocation loops appear. The total volumes of bubble and loop components in such complexes are found to be equal. This striking relation is attributed to the transfer of matrix atoms from the bubbles to the associated loops by dislocation core diffusion. [S0031-9007(99)08776-1]

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On the low-temperature nucleation and growth of bubbles by helium bombardment of metals

Cited by 50 publications

References 34 publications

The effects of helium on irradiation damage in single crystal iron

The effects of helium on irradiation damage in single crystal iron

Thermal desorption and surface modification of He+ implanted into tungsten

Evolution of Helium Platelets and Associated Dislocation Loops inα-SiC

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