On the Large Threshold Voltage Shifts of Nano-structured Thin Film Electroluminescent Devices

Abstract

A large threshold voltage shift (ÁV th ) seen in the nano-structured-thin film electroluminescent device (NS-TFELD) has been studied with simple formulas derived from the continuity of the electric flux density through the nano-structured dielectric layers. The electric fields in the emission layers and the tunneling rate from the interface state are dependent on the material and geometric parameters consisting of the emission layer, being different from those of the conventional TFELD. The estimates of ÁV th in NS-TFELD are in good agreement with the experimental data, implying that NS-TFELD operating at very low voltages will be realized.