On the kinetics of anomalous muonium in silicon

Ivanter, I.G.; Krasnoperov, E. P.; Nikol'skii, B.A.; Ponomarev, A. N.; Duginov, V. N.; Zimmermann, U.

doi:10.1134/1.1567771

Cited by 1 publication

(5 citation statements)

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“…Dalmas de Réotier et al (1990) give the form of the relaxation function for the octahedral and tetrahedral interstitial sites of an fcc lattice. Quadrupole interactions are included in the treatment by Ivanter and Nikol'skii (1989), nuclear spin dynamics in those by Dalmas de Réotier and Yaouanc (1992), Dalmas de Réotier et al (1992); the effects of diffusion and trapping are treated by Petzinger (1980), Dattagupta and Purniah (1982) and, for TF lineshapes, by Kehr et al (1978). (FMuF) − , analogue of the bifluorite ion (FHF) − , in alkali halides (Brewer et al 1986).…”

Section: Zero-field Methods: Kubo-toyabe Relaxationmentioning

confidence: 99%

“…In this interpretation, the 176 See, for instance, Nosov andYakovleva (1963, 1965) or Senba (1990b). More precise forms, useful at high fields, are given by Senba (2000), Ivanter andSmilga (1968, 1969) and by Gorelkin et al (2000).…”

Section: Transverse and Longitudinal Spin Relaxation In S And Sementioning

confidence: 96%

“…Mooted tentatively for H in Si by , Van de Walle (1988, 1989, and more firmly by Johnson et al (1994), the experimental evidence at first became the topic of some controversy (see, e.g. Seager et al 1995).…”

Section: Electrical Activity In Siliconmentioning

confidence: 98%

“…solutions for a common model were devised by Nosov andYakovleva (1963, 1965)-we make use of these in connection with data for sulphur (section 6)-and developed to a state of some complexity by Ivanter andSmilga (1968, 1971).…”

Section: Repolarization and Level-crossing Resonancementioning

confidence: 99%

“…In section 6 we encounter a situation where the fast depolarization is too fast to display. Model field dependences for λ(B) must then be assumed to interpret the product repolarization curve or slow component, as in treatments byNosov and Yakovleva (1963, 1965) andIvanter and Smilga (1968, 1971). In the data of figure37, the slowly relaxing or baseline component also subsumes the small prompt diamagnetic signals, both for P and As.…”

mentioning

confidence: 99%

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Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

2009

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Although the interstitial hydrogen atom would seem to be one of the simplest defect centres in any lattice, its solid state chemistry is in fact unknown in many materials, not least amongst the elements. In semiconductors, the realization that hydrogen can profoundly influence electronic properties even as a trace impurity has prompted its study by all available means-but still only in the functionally important or potentially important materials-for the elements, Si, Ge and diamond. Even here, it was not studies of hydrogen itself but of its pseudo-isotope, muonium, that first provided the much needed microscopic pictures of crystallographic site and local electronic structure-now comprehensively confirmed by ab initio computation and such data as exists for monatomic, interstitial hydrogen centres in Si. Muonium can be formed in a variety of neutral paramagnetic states when positive muons are implanted into non-metals. The simple trapped atom is commonly only metastable. It coexists with or reacts to give defect centres with the unpaired electron in somewhat more extended orbitals. Indications of complete delocalization into effective mass states are discussed for B, α-Sn, Bi and even Ge, but otherwise all the muonium centres seen in the elemental semiconductors are deep and relatively compact. These are revealed, distinguished and characterized by µSR spectroscopy-muon spin rotation and resonance informing on sites and spin-density distributions, muon spin relaxation on motional dynamics and charge-state transitions.This Report documents the progress of µSR studies for all the semiconductors and semimetals of the p-block elements, Groups III-VI of the Periodic Table . The striking spectra and originally unanticipated results for Group IV are for the most part well known but deserve summarizing and updating; the sheer diversity of muonium states found is still remarkable, especially in carbon allotropes. The interplay of crystallographic site and charge state in Si and Ge at high temperatures, or under illumination, reflects the capture and loss of charge carriers that should model the electrical activity of monatomic hydrogen but still challenges theoretical descriptions. Spin-flip scattering of conduction electrons by the paramagnetic centres is revealed in heavily doped n-type material, as well as some modification of the local electronic structures. The corresponding spectroscopy for the solid elements of Groups III, V and VI is rather less well known and is reviewed here for the first time; a good deal of previously unpublished data is also included. Theoretical expectations and computational modelling are sparse, here. Recent results for B suggest a relatively shallow centre with molecular character; P and As show deeper quasi-atomic states, but still with substantial overlap of spin density onto surrounding host atoms. Particular attention is paid to the chalcogens. Muonium centres in Te show charge-state transitions already around room temperature; the identification of those in S and Se has been compli...

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