On the interaction of copper with defects in gallium arsenide

Shallow acceptor levels in Cu-doped GaAs crystals

“…This fact stimulated our additional investigations on the nature of the shallow acceptor level. (1) and from the melt with 50.5% As (2) for samples grown from a >> 2x10 /cm therefore psat N Na .…”

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Doping of GaAs crystals by Cu from the melt o r by diffusion causes the appearance of an acceptor level system. Two levels of this system were intensively studied:the "deep" level (0.1 to 0.2 eV) (1,2) and the shallow one (0.02 t o 0.03 eV) ( 2 , 3 ) .In these papers the shallow level was supposed to be a simple defect occurring when Si replaces As in the lattice of GaAs.The connection of this level with Si was confirmed by u s by simultaneous doping with Cu and Si and p-type conductivity which causes an increase of N a s compared with the samples doped only with Cu at any composition of the melt.at least twice 1 aThe connection of N with residual Si has been pointed out also in ( 3 , 5). Haw-1 a ever, from the results of (6, 7) it follows that the concentration of electrically active Si in donor state, Si[SiGa]/ [SiAs] -2 (8).

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