On the initial stage of plastic deformation of sulphur‐doped gallium phosphide

Boehnke, O.; Paufler, P.

doi:10.1002/crat.2170240314

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…Consequently, we expect phonon frequencies in nanoscale specimens (see for example, [38,39]) to be lower than those measured in larger specimens. Also, plastic deformation does not occur in GaP until temperatures above 670 K [45], so the generation of dislocations due to the increased temperature and their effect on the Raman response can be neglected. Since we eliminated a wide variety of experimental artifacts as the source of the low, variable elastic moduli and larger than ideal failure strains, we needed to reconsider the Raman shift as a function of applied stress that we collected from the GaP nanowires.…”

Section: Resultsmentioning

confidence: 99%

On the origins of anomalous elastic moduli and failure strains of GaP nanowires

2017

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Previous reports suggest that Raman peaks in uniaxially loaded nanowires with diamond cubic and zinc blende crystal structures shift at rates that are significantly different from bulk specimens. We have investigated the first order Raman scattering from individual, free-standing, [111] oriented GaP nanowires ranging from 75 to 180 nm in diameter at uniaxial tensile stresses up to 5 GPa. All of the phonon modes were shifted to frequencies lower than previously reported for bulk GaP, and significant splitting of the degenerate transverse optical mode was observed. A general analysis method using single and double Lorentzian fits of the Raman peaks is presented and used to report more accurate values of the phonon deformation potentials (PDPs) that relate uniaxial strains to Raman peak shifts in GaP. A new set of PDPs determined from the nanowires revealed that the they have elastic moduli and failure strains that are consistent with bulk GaP. The analysis method eliminated the anomalous, inconsistent deformation behavior commonly reported in Raman-based strain measurements of nanowires, and can be extended to other materials systems with degenerate phonons.

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Section: Resultsmentioning

confidence: 99%

On the origins of anomalous elastic moduli and failure strains of GaP nanowires

2017

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“…Plastic deformation has been carried out using a four-point bending equipment described by Boehnke (1988) and Boehnke and Paufler (1989) in more detail. The distance of the outer and inner knife-edges was /" = 14.8 mm and /,· = 7.6 mm, respectively.…”

Section: Deformation Proceduresmentioning

confidence: 99%

Slip band formation during bending of GaAs wafers

Solcher¹,

Klöss²,

Paufler³

1990

Zeitschrift Für Kristallographie - Crystalline Materials

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Slip bands which appear after 4-point bending of liquid encapsulated Czochralski grown zinc doped GaAs (001) wafers at (412...447)°C have been characterized quantitatively both by reflection and transmission microscopy. Slip is initiated at the edges of the tensile part of the specimen. Deformation proceeds by the growth of slip bands in length through the whole specimen and in height up to « 200 nm. Their average distance goes down to « 20 μηι within the bending angle interval (0.2.. .5.9)° investigated. Residual stresses a t -σ 2 «(8...30) MPa have been detected by stressinduced birefringence measurements in the bent crystals.

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