2015
DOI: 10.1063/1.4906410
|View full text |Cite
|
Sign up to set email alerts
|

On the influence of tetrahedral covalent-hybridization on electronic band structure of topological insulators from first principles

Abstract: Based on first-principles calculations, we investigate the influence of tetrahedral covalent-hybridization between main-group and transition-metal atoms on the topological band structures of binary HgTe and ternary half-Heusler compounds, respectively. Results show that, for the binary HgTe, when its zinc-blend structure is artificially changed to rock-salt one, the tetrahedral covalent-hybridization will be removed and correspondingly the topologically insulating band character lost. While for the ternary hal… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0
1

Year Published

2017
2017
2021
2021

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 44 publications
0
2
0
1
Order By: Relevance
“…Moreover, we also perform the ELF maps project on the (1 1 0) plane of the LiCrS in types I, II, and III, respectively. The high- and low- ELF values in the graphs of ELF correspond to areas of localized electrons and the area around the maxima, respectively [ 35 ]. As shown in Figure 6 a,c, for the type I and type III arrangements, the regions of the highest ELF value are all around the main-group S atom along the S-Cr bound axes, indicating their sharing behavior and the occurrence of the covalent bond.…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, we also perform the ELF maps project on the (1 1 0) plane of the LiCrS in types I, II, and III, respectively. The high- and low- ELF values in the graphs of ELF correspond to areas of localized electrons and the area around the maxima, respectively [ 35 ]. As shown in Figure 6 a,c, for the type I and type III arrangements, the regions of the highest ELF value are all around the main-group S atom along the S-Cr bound axes, indicating their sharing behavior and the occurrence of the covalent bond.…”
Section: Resultsmentioning
confidence: 99%
“…Several kinds of crystal structures are found or predicted to have a topological insulator phase: for example, Bi 2 Te 3 [1] and Bi 2 Se 3 [1] in the hexagonal structure; LaPtBi [10,11] half-Heusler compound [9,[12][13][14][15][16][17], oxide perovskite [18,19], halide perovskite [20][21][22], binary compound [23], Ba 2 BiIO 6 [24], and CaTePoO 6 [25] double perovskites in the cubic structure. The bulk bandgap for these Tls are in general smaller than 0.5 eV; for example, bismuth-based compounds such as Bi 2 Te 3 [26] are 0.17 eV, Bi 2 Te 2 S [27] 0.3 eV, and PbBi 4 Te 4 S 3 is 0.2 eV in the experiment and 0.3 eV in theory.…”
Section: Introductionmentioning
confidence: 99%
“…由于第一原理计 算已证实此结构体系拓扑Z 2 不变量没有反对称性 的量子本质, 加上这个系列材料如磁性和超导性等 其他有趣的物理性质, 于是基于密度泛函理论的第 一性原理计算方法将三元半Heusler化合物转变 为三维拓扑绝缘体成为研究热点 [9,10] . 对于三维拓 扑绝缘体半Heusler化合物的研究, 结合这些材料 的磁性和超导性质, 在实验方面也成为了一个有巨 大价值的研究平台 [11,12] . 目前通过第一原理计算, 大量的半Heusler三 元化合物已经被发现具有反带结构, 例如LuPtSb, ScPtBi, YPdBi, ThPtPb, 都可以通过单轴应力成 为三维拓扑绝缘体的备选材料 [13] .…”
unclassified