1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)
DOI: 10.1109/vtsa.1999.785992
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On the impact of indium and boron on the Reversed Narrow-Channel Effect (RNCE) in BULK and SOI MOSFETs

Andries van der Meer
1
,
Jeongho Lyu2,
Stefan Kubicek3
et al.
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