On the fluence dependence of the sputtering yield for low-energy noble gas ions

Kirschner, J.; Etzkorn, H.

doi:10.1007/bf00617769

Cited by 22 publications

(6 citation statements)

References 18 publications

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“…For 140 keV this occurs over the initial 40 nm of sputtering, which is rather less than the projected range 30 for these ions either in Si or, to allow for the implanted Xe, in Si 0.88 Xe 0.12 . Kirschner and Etzkorn 31 show that the sputtering yield for Si using Ar ions incident at 50°is enhanced by a factor of 2.3 at both 0.5 and 1 keV, falling to 1.6 at 3 keV, 1.3 at 5 keV and ¾1.25 at energies up to 270 keV. Approximately 95% of the enhancement saturates after sputtering 2.5 nm at 500 eV, 4.4 nm at 1 keV and 6.3 nm at 5 keV.…”

mentioning

confidence: 98%

An accurate semi‐empirical equation for sputtering yields I: for argon ions

Seah¹,

Clifford²,

Green³

et al. 2005

Surface & Interface Analysis

117

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An analysis has been made of the historical data for argon ion sputtering yields of 28 mono-elemental solids in the energy range 250-10 000 eV to develop an improved semi-empirical formula based on Matsunami et al.'s and Yamamura and Tawara's formulations. The best result is found if an essential component involving the target density is included in Matsunami et al.'s approach. The scatter between the predictions and the experimental data is reduced to 9.0% by generating an analytical expression for the term Q that requires none of the target-specific numbers from special look-up tables of the type used by Matsunami et al. and Yamamura and Tawara. For elements other than the 34 elements for which Q values are tabulated, the new Q values range up to a factor of 5 from the default value that they recommend.The predictions are tested by a new method for determining sputtering yields using atomic force microscopy to measure very small crater volumes sputtered in ultrahigh vacuum. Here, 26 mono-elemental targets were studied using a 5 keV argon ion beam set at 45• to the surface normal. The effect of the angle of incidence is evaluated best using Yamamura et al.'s angular equations for this contribution. Results for Sb, Te and Bi indicate a significantly higher sputtering yield than expected. This is thought to arise from the high content of polyatomic groups associated with the low sublimation energies for such clusters in the pure elements of groups V-B and VI-B of the Periodic

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mentioning

confidence: 98%

An accurate semi‐empirical equation for sputtering yields I: for argon ions

Seah¹,

Clifford²,

Green³

et al. 2005

Surface & Interface Analysis

117

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show abstract

“…Surface analysis techniques, including Rutherford back scattering spectroscopy (RBS), are available for measuring the change in thickness or composition of targets on an atomic scale during sputtering. [3] The PIXE technique can quantify both initial surface impurities as well as the pure sputter yield of the target. Scanning electron microscope (SEM) and stylus techniques are used for measuring minute changes in target thickness.…”

Section: Sputter Yieldmentioning

confidence: 99%

Sputtering Phenomena

Wasa

Kitabatake²,

Adachi³

2004

Thin Film Materials Technology

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“…The sputtering of silicon produced by noble gas ions has been profusely studied both experimentally and theoretically due to its use in technological processes related to the microelectronic industry, such as etching, surface cleaning, profiling ͑secondary ion mass spectrometry͒, etc. Some experiments have been carried out to analyze the dependence of the sputtering yield on the ionic species, 1 on the ion energy, 2 and on the implanted dose, [2][3][4][5] as well as the angular distribution of the sputtered atoms. 6 All these experiments were carried out under high dose conditions, enough to amorphize the silicon samples.…”

Section: Introductionmentioning

confidence: 99%

“…2 It was also shown that steady state conditions were reached when the ion content of the sample saturated 2 and its surface was eroded to a depth close to the projected range of the ions. 4 Some authors have proposed different possible explanations to justify this behavior. For example, Blank and Wittmaack stated that the sputtering yield increase with dose is due to a ''wall effect'' produced by the ions incorporated near the target surface.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, Kirschner and Etzkorn justified the sputtering enhancement through the weakening of bonds among silicon atoms close to the target surface produced by the presence of the implanted ions. 4 Finally, Wittmaack proposed that this enhancement is due to displacements toward the surface of noble gas atoms previously implanted. 5 These atoms could drag silicon atoms in their way back to the target surface.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

Marqués

Rubio

Jaraı́z

et al. 1997

Journal of Applied Physics

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We have investigated, using molecular dynamics techniques, the sputtering yield enhancement of amorphous silicon produced by argon ion accumulation within the target. Several amorphous silicon samples, with different argon contents, were bombarded with 1 keV argon ions at normal incidence. To study the influence of the target structure, we considered samples with different argon arrangements, either uniformly distributed or within solid bubbles. We have observed that silicon sputtering yield increases linearly with dose until steady state conditions are reached. This enhancement is produced by the shallow argon atoms through the weakening of Si-Si bonds. We have also observed that argon release takes place even long after the end of the collisional phase, and it is produced by ion-induced desorption and bubble destabilization. This enhanced argon yield determines the dose where target saturation and steady state conditions are reached.

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On the fluence dependence of the sputtering yield for low-energy noble gas ions

Cited by 22 publications

References 18 publications

An accurate semi‐empirical equation for sputtering yields I: for argon ions

An accurate semi‐empirical equation for sputtering yields I: for argon ions

Sputtering Phenomena

Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

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