2010
DOI: 10.1116/1.3511508
|View full text |Cite
|
Sign up to set email alerts
|

On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems

Abstract: In this article, the authors present and discuss the fabrication of three-dimensional ͑3D͒ optical phased array ͑OPA͒ devices for large angle, two-dimensional optical beam steering. Fabrication of a single layer ͑one-dimensional͒ OPA prototype for one-dimensional beam steering on silicon nanomembrane is presented. The authors present different approaches, such as nanoimprint lithography, optical lithography, and self-aligned patterning of multibonded silicon-on-insulator wafers, for the realization of 3D OPA d… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
10
0

Year Published

2011
2011
2021
2021

Publication Types

Select...
4
3

Relationship

1
6

Authors

Journals

citations
Cited by 20 publications
(10 citation statements)
references
References 12 publications
0
10
0
Order By: Relevance
“…First, the method proposed in [12] can be utilized in this fabrication, the challenge in this method will be the control on the planarization step, this step will influence the thickness of the sandwiched SiO 2 layer, while the precise control of this thickness is crucial in this structure. Second, thanks to the identical patterns on each Si 3 N 4 layer, it is possible to utilize the self-aligning method proposed in [15]. The fact that Si 3 N 4 and SiO 2 have a low etching selectivity between each but both have a high selectivity against Si also can help on this method: the selectivity difference offers a possibility to etch down multiple layers of Si 3 N 4 and SiO 2 within the same etching step where a Si is used as the mask.…”
Section: Structure Configurationmentioning
confidence: 99%
See 1 more Smart Citation
“…First, the method proposed in [12] can be utilized in this fabrication, the challenge in this method will be the control on the planarization step, this step will influence the thickness of the sandwiched SiO 2 layer, while the precise control of this thickness is crucial in this structure. Second, thanks to the identical patterns on each Si 3 N 4 layer, it is possible to utilize the self-aligning method proposed in [15]. The fact that Si 3 N 4 and SiO 2 have a low etching selectivity between each but both have a high selectivity against Si also can help on this method: the selectivity difference offers a possibility to etch down multiple layers of Si 3 N 4 and SiO 2 within the same etching step where a Si is used as the mask.…”
Section: Structure Configurationmentioning
confidence: 99%
“…Several works have been attempted to address the relatively low efficiency challenge [11][12][13][14][15][16]. In [11], a structure configuration to emit light from the edge of the chip is utilized.…”
Section: Introductionmentioning
confidence: 99%
“…To achieve 2D beam steering, a stack of 1D silicon photonic PICs was suggested in Ref. [15]. This approach is shown schematically in Figure 4.…”
Section: Optical Phased Arrays With Individually Tunable Emittersmentioning
confidence: 99%
“…To illuminate that point, let us imagine that LSI is here today-imagine that we are given a chip that contains 10,000 nanophotonic components of our choosing. Then two questions arise immediately: (1) What is the specific function of the chip-system? (2) What is the specific architecture that will be employed to actualize the system?…”
Section: The Challenges Of Large-scale Oe Integrationmentioning
confidence: 99%
“…That MURI team used two bonded photonic layers containing phase shifters and time delays to steer on optical beam in one dimension [1].…”
Section: The 3d Chipmentioning
confidence: 99%