On the electronic transport properties of polycrystalline ZnSe films

Rusu, G.I.; Popa, M. E.; Salaoru, Iulia

doi:10.1016/s0169-4332(03)00618-4

Cited by 70 publications

(52 citation statements)

References 31 publications

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“…The deposition process is based on the slow release of sulfide ions via the controlled hydrolysis of thiourea [SC(NH 2 ) 2 ] in an alkaline medium in the presence of a Cd salt and a chelating agent such as NH 3 . 23 The very high resistivity of the asdeposited films, typically on the order of 10 6 -10 7 O-cm at room temperature, [13][14][15][16][17][18][19][20][21][22][23][24] has been attributed to lattice defects and dislocations, [25][26][27][28][29] and can be reduced by annealing the film. The physical and chemical properties of not only CdS films but also most of the binary metal chalcogenides of II-VI semiconductors obtained by CBD critically depend on preparative parameters such as the source and concentration of metal and chalgonide ions, pH of the deposition solution, deposition time and temperature, and gas phase process parameters such as temperature, gas partial pressure, and the time of annealing.…”

Section: Introductionmentioning

confidence: 99%

The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

et al. 2010

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Cadmium sulfide (CdS) photocatalyst films were grown on glass by chemical bath deposition (pH 9.4, 70 C) and then annealed in nitrogen from 423 K to 823 K in steps of 100 K. The XRD crystallite size increases in a sigmoidal manner from 60 nm to 100 nm while the optical band gap energy decreases from 2.42 eV to 2.28 eV. This trend is paralleled by the decreasing Urbach energy, but only up to 623 K, where it increases again. This is the temperature where the Cd effectively surpasses the phase transformation from cubic to hexagonal, and the activation energy for electronic transport drops by a factor of nearly two.

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Section: Introductionmentioning

confidence: 99%

The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

et al. 2010

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“…The electrical transport properties play a key part in deciding the character as well as applications of the semiconductor devices. These properties are mainly influenced by their structural characteristics, purity, nature and the concentration of the impurities (Chopra 1969;Harbeke 1985;Rusu et al 2003). A plot of log (conductivity) versus inverse temperature (1,000/T) is indicated in Fig.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Structural, opto-electronic and photoelectrochemical properties of tungsten diselenide thin films

Sathe¹,

Chate²,

Hankare

et al. 2015

Appl Nanosci

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Nanocrystalline tungsten diselenide thin films have been deposited on non-conducting glass and stainless steel substrates by chemical methods. Various preparative conditions were optimized for the formation of thin films. The X-ray diffraction analysis shows that the film samples are in layer-hexagonal crystal structure. EDAX analysis shows that the films are nearly stoichiometries of W:Se. Optical properties show a direct band gap nature with band gap energy 1.5 eV. Specific electrical conductivity was found to be in the order of 10 -3 to 10 -2 (X cm) -1 . The photoelectrochemical characterization of the films was carried out by studying current-voltage characteristics, capacitance-voltage and power output characteristics. The efficiency of photoelectrode was found to be 1.31 % using iodine-poly iodide electrolyte.

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“…The only works [14][15][16][17][18] were devoted to study these films. But in [15], the authors studied only structural characteristics of ZnSe films obtained at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…But in [15], the authors studied only structural characteristics of ZnSe films obtained at room temperature. More fundamental research was carried out in [14] for films deposited at substrate temperatures 473 to 623 K. Some structural and optical characteristics of CdSe films were investigated in [16]. There these condensates were obtained in the narrow range of substrate temperatures 290 to 490 K. It should be noted that the measurement of lattice constants and substructural characteristics of ZnSe and CdSe films was done by the authors along (111) line at small angles that resulted in considerable mistakes in determining these characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…There these condensates were obtained in the narrow range of substrate temperatures 290 to 490 K. It should be noted that the measurement of lattice constants and substructural characteristics of ZnSe and CdSe films was done by the authors along (111) line at small angles that resulted in considerable mistakes in determining these characteristics. In the works [14][15][16], a complex approach for studying the film properties is absent.…”

Section: Introductionmentioning

confidence: 99%

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Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

Ivashchenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, the complex investigation of structural and optical properties of zinc and cadmium selenide semiconductor films deposited by close-spaced vacuum sublimation method using thermal evaporation on non-oriented substrates was carried out. The structural and phase analyses of the layers condensed at different substrate temperatures were performed. The transmission and reflection spectra of the investigated films have been measured and their main optical characteristics have been calculated.

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On the electronic transport properties of polycrystalline ZnSe films

Cited by 70 publications

References 31 publications

The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

Structural, opto-electronic and photoelectrochemical properties of tungsten diselenide thin films

Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

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