2024
DOI: 10.1209/0295-5075/ad5c98
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On the Einstein-de Haas effect in van der Waals microelectromechanical systems

Maksim A. Koliushenkov,
Alexander P. Pyatakov

Abstract: The electric field-induced gyromagnetic effect in antiferromagnetic 2D films, analogous to the classical Einstein-de Haas effect in ferromagnetic materials, is considered. It is shown that for the micrometer-sized flakes of antiferromagnetic van der Waals materials having a non-diagonal tensor of the magnetoelectric effect, the magnitude of the electrically induced Einstein–de Haas effect is sufficient to be detected with the conventional optical lever approach of an atomic force microscope.

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