On the efficiency of deposited energy density for ion beam mixing processes with ions implanted during and after thin metal film deposition

Surface Properties of Me/Si Structures Prepared by Means of Self-Ion Assisted Deposition

“…The system employed for the coating deposition has been described in detail elsewhere [5] and consists, essentially, of a vacuum chamber to which a resonance vacuum arc source (RVAS) with metal (titan or cobalt) electrodes to produce a mixture of Me atoms and Me + ions attached is. Substrate (silicon wafers) was oated to a negative potential with respect to the source of 7 kV to accelerate the ion species.…”

Elastomer treatment by arc metal deposition assisted with self-ion irradiation

“…These methods have a common factor in that they use evaporation plus a reactive or noble gas ion bombardment. However, in such circumstances, a sufficiently large N or Ar (Kr, Xe) concentration in the interfacial film-substrate region may be obtained [6,7].…”