For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe 2 As 2 was observed along [100] direction, corresponding to a uniaxial pressure derivative dT c /dp 100 = −4 K/GPa. For Mn 3 CuN, a uniaxial strain derivative along [100] direction of the Curie temperature dT C /d 100 = 13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures. a)