On the Design of Wideband Transformer-Based Fourth Order Matching Networks for ${E}$ -Band Receivers in 28-nm CMOS

Vigilante, Marco; Reynaert, Patrick

doi:10.1109/jssc.2017.2690864

Cited by 153 publications

(25 citation statements)

References 25 publications

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“…In a wideband design, both poles should lie in the bandwidth of interest, and to obtain a flat transfer function, the transimpedance at these poles should be equalized, i.e., |Z 21 (ω 2 )/Z 21 (ω 1 )| = 1. For a lossless matching network, this can be obtained by setting ξ = 1 [39]. However, with practical quality factors for the inductors, this needs to be increased to, e.g., 1.5, as shown in Fig.…”

Section: E Output Drivermentioning

confidence: 99%

A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

Dijk

Patra

Subramanian

et al. 2020

IEEE J. Solid-State Circuits

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Building a large-scale quantum computer requires the co-optimization of both the quantum bits (qubits) and their control electronics. By operating the CMOS control circuits at cryogenic temperatures (cryo-CMOS), and hence in close proximity to the cryogenic solid-state qubits, a compact quantumcomputing system can be achieved, thus promising scalability to the large number of qubits required in a practical application. This work presents a cryo-CMOS microwave signal generator for frequency-multiplexed control of 4 × 32 qubits (32 qubits per RF output). A digitally intensive architecture offering full programmability of phase, amplitude, and frequency

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Section: E Output Drivermentioning

confidence: 99%

A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

Dijk

Patra

Subramanian

et al. 2020

IEEE J. Solid-State Circuits

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“…8, was designed. The tank is also used to analyze the impact of the cryogenic operation of passive components on the performance of RFIC blocks like oscillators [39], power amplifiers (PAs) [40], and wideband LNAs [41]. The application of the transformer-based resonator in such circuits is shown in Fig.…”

Section: Impact On Rficsmentioning

confidence: 99%

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

Patra

Mehrpoo

Ruffino

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.

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“…However, in Ku-band the transistor Miller capacitor degrades the amplifier stability. To solve this issue, in this design the capacitive neutralization technique is realized with Metal-oxide-Metal (MoM) capacitors, improving the amplifier reverse isolation and simplifying the amplifier design [15][16][17]. Fig.…”

Section: B the Neutralized Cs Amplifiermentioning

confidence: 99%

An Image Rejection Ku-Band CMOS Low Noise Amplifier With Bridged-Tee Band-Stop Filter

Cheng

et al. 2020

IEEE Access

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For satellite communication applications, this paper presents an image rejection Ku-band low noise amplifier (LNA) in a 65-nm CMOS process for the Hartley receiver architecture. To achieve high input/output linearity performance, the inductive source degenerated cascode and the capacitive neutralized common-source (CS) amplifier topologies are used in the LNA input and output stages, respectively. To achieve wideband input return loss, the minimum noise figure and high gain performance simultaneously, the inductive source degenerated cascode amplifier is co-designed with the fourth order input impedance matching network. For the image rejection purpose, a bridged-tee band-stop filter is proposed. The measurements show the LNA achieves 14.3-to-18.3 GHz 3 dB bandwidth with 17-to-20 dB power gain, 3.5to-4 dB noise figure, 17-to-37 dB image rejection and-5 dBm IIP3. Including all pads, the chip occupies a silicon area of 1360 × 450 μm 2 and consumes 72 mW DC power. INDEX TERMS CMOS, Ku-band, low noise amplifier (LNA), band-stop filter (BSF), image rejection.

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On the Design of Wideband Transformer-Based Fourth Order Matching Networks for ${E}$ -Band Receivers in 28-nm CMOS

Cited by 153 publications

References 25 publications

A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

An Image Rejection Ku-Band CMOS Low Noise Amplifier With Bridged-Tee Band-Stop Filter

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