On the Design of Broadband Power-to-Current Low Noise Amplifiers

Li, Xiaolong; Serdijn, Wouter A.

doi:10.1109/tcsi.2011.2165413

Cited by 8 publications

(3 citation statements)

References 17 publications

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“…It is found that the proposed LNA outperforms the considered LNAs and has the highest value of FoM among the reported ones in Table 5. LNA proposed in Reference 52, exhibits better gain and NF, that is, 23 and 0.8 (simulated), respectively, but at the cost of very high non‐linearity (IIP 3 = −1), which results in the lowest FoM

0.41 \times 10^{9}

, in Table 5. In comparison, our proposed LNA design has a gain of 19, NF 1.25, and linearity (IIP 3 ) 21.5, with the highest value of FoM

10.1 \times 10^{9}

among the considered LNAs.…”

Section: Measured Resultsmentioning

confidence: 97%

“…We do the performance analysis of the proposed design of LNA with respect to state-of-the-art LNAs near our design band. We consider the design of LNAs recently published [52][53][54][55][56][57] for comparative study. Here, only the class of single-stage amplifiers near the band range 1.3-2.3 GHz are selected and compared based on the figure of merit (FoM) defined by the International Technology Roadmap for Semiconductor (ITRS).…”

Section: Measured Resultsmentioning

confidence: 99%

“…We consider different LNAs working in a band near about 1.3 to 2.3 GHz across the device technologies CMOS 53,55,57 and GaAs 52 to compare the performance of our proposed LNA, refer to Table 5. FoM is calculated for the considered LNAs and our proposed LNA using Equation (21).…”

Section: Measured Resultsmentioning

confidence: 99%

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A multi‐variable double impedance matching network design algorithm with design example of a low noise amplifier

Bajpai

Chauhan

2022

Int J RF Mic Comp-Aid Eng

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In this article, we propose a matching network design algorithm based on the segmentation of the real and imaginary part of optimum source impedance curve with respect to space variable x and frequency ω, respectively. The impedance curve (comprising of real and imaginary parts) is approximated as a collection of n linear segments, represented by the weighted sum of n semiinfinite linear functions. Using the numerical method, optimum weight vectors that maximize transducer power gain are obtained to model the real and imaginary parts of the source impedance curve. We get the values of optimum weight vectors and the rational input impedance function for the matching network, which are then synthesized in the desired topology by a continued partial fraction. Experimentally, we validate the novelty of the proposed method by designing matching networks of a wideband custom monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) in 1.3-2.3 GHz frequency band. The measured results of the designed LNA are significantly close to the simulated results. We bias our LNA at (5 V, 150 mA) and achieve a maximum noise figure of 1.25 dB, OP 1dB of 26 dBm, and an average TOI of 38 dBm. Moreover, our design of custom LNA MMIC has an integrated ESD structure while occupying only 0.32 mm 2 of chip area.

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0.41 \times 10^{9}

, in Table 5. In comparison, our proposed LNA design has a gain of 19, NF 1.25, and linearity (IIP 3 ) 21.5, with the highest value of FoM

10.1 \times 10^{9}

among the considered LNAs.…”

Section: Measured Resultsmentioning

confidence: 97%

Section: Measured Resultsmentioning

confidence: 99%

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A multi‐variable double impedance matching network design algorithm with design example of a low noise amplifier

Bajpai

Chauhan

2022

Int J RF Mic Comp-Aid Eng

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High-gain sub-decibel noise figure low noise amplifier for atmospheric radar

Murthy

Rao

2016

Microw. Opt. Technol. Lett.

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This article presents the design of a compact and low‐cost single‐stage narrow band low‐noise amplifier (LNA) for atmospheric radar application. Active feedback technique is employed to improve linearity without affecting the noise figure and gain. The source‐degenerated inductor topology is used along with the cascaded transistors to achieve stability with maximum gain and minimum noise figure simultaneously. High‐pass input and output matching circuits are used to improve input and output return losses. The amplifier was implemented on a low‐loss substrate RT/duroid with pseudomorphic high electron mobility transistor (pHEMT) technology at 1.3 GHz. The measured results of LNA exhibit a gain of 28 dB and noise figure of 0.39 dB. The input and output return losses are <10.8 dB and third‐order input intercept point is 33 dBm. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1618–1622, 2016

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