On the Defect Physics Behind Light and Elevated Temperature-Induced Degradation (LeTID) of Multicrystalline Silicon Solar Cells

Schmidt, Jan; Bredemeier, Dennis; Walter, Dominic

doi:10.1109/jphotov.2019.2937223

Cited by 64 publications

(47 citation statements)

References 31 publications

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“…Current LeTID models consider that the recombination active LeTID defect could also be an isolated metal impurity, in which case the corresponding metal-hydrogen complex would serve as the nonrecombination active precursor defect. Several metal-hydrogen defects have LVMs that fall below the lower range (1850 cm −1 ) of our InSb detector, as described by Schmidt et al 24 We have made additional measurements (not shown) on our samples using a liquid-nitrogen-cooled MCT detector, which provides a lower spectral limit of 600 cm −1 . No metal-hydrogen LVMs were detected in any of the wafer states.…”

Section: Journal Of Applied Physicsmentioning

confidence: 76%

“…20,21 Although the root-cause of LeTID is still unknown, the involvement of hydrogen, either by itself or in a defect complex, is strongly suspected. 10,16,[22][23][24] A defect model including H-B states has recently been proposed to explain the LeTID. 25 In addition, some metallic impurities remain as potential candidates.…”

Section: Introductionmentioning

confidence: 99%

“…25 In addition, some metallic impurities remain as potential candidates. 22,24,26 Despite many states and potential effects of hydrogen in the bulk silicon, it is notoriously difficult to observe directly. The concentrations in the bulk are often too low to be detected, e.g., using secondary ion mass spectrometry (SIMS) even when hydrogen is substituted with deuterium (D) for increased sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process

Weiser

Monakhov

Haug

et al. 2020

Journal of Applied Physics

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Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-induced degradation observed predominantly in p-type silicon wafers, but the nature of the defect or defects involved in this process is currently unknown. We have used infrared (IR) spectroscopy to detect the vibrational signatures due to the H-B, H-Ga, and H 2 *(C) defects in thin, hydrogenated, p-type multicrystalline silicon wafers after increasing the optical path length by preparation and polishing the edges of a stack of wafers. The concentrations of the H-B and H-Ga acceptor complexes are reduced to 80% of their starting values after low intensity (5 mW/cm 2) illumination at room temperature for 96 h. Subsequent high intensity illumination (70 mW/cm 2) at 150°C for 7-8 h further decreases the concentrations of these defects; to ∼40% (H-B) and ∼50% (H-Ga) of their starting values. Our results show that, with careful sample preparation, IR spectroscopy can be used in conjunction with other techniques, e.g., quasisteady-state photoconductance, to investigate the involvement of different H-related point defects on degradation in solar-grade silicon wafers.

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Section: Journal Of Applied Physicsmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process

Weiser

Monakhov

Haug

et al. 2020

Journal of Applied Physics

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“…In addition, it is well-known that so-called LID (light induced degradation) [151][152][153] and LeTID (light and elevated temperature induced degradation) [154][155][156][157][158][159][160][161][162][163][164] have recently gained a lot of attention in p-type Si solar cells. Publication II presents results on the well-known boron-oxygen (B-O) complex (BO-LID) and related anti-LID treatment of the industrial PERC cells.…”

Section: State Of the Art And Challengesmentioning

confidence: 99%

“…Furthermore, the root cause for LeTID remains unknown at the moment, although there are indications of involvement of hydrogen, metal (e.g. nickel or copper) and/or related firing parameters in the recent literature [154][155][156][157][158][159][160][161][162][163][164].…”

Section: State Of the Art And Challengesmentioning

confidence: 99%

Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Huang

Modanese

Sun

et al. 2018

Solar Energy Materials and Solar Cells

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Enhanced Conversion Efficiency of Monocrystalline P‐Type Passivated Emitter and Rear Cells in Commercial Production Line by Improving Rear Side Passivation

Shen

Neoh

et al. 2021

Energy Tech

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An industrially proven method for increasing cell efficiency of monocrystalline P‐type PERC cells is reported, whereby a layer of silicon oxide or silicon oxynitride (SiO x /SiO x N y ) is sandwiched between aluminum oxide (AlO x ) and silicon nitride (SiN x ) in the rear passivation stack, forming an AlO x + SiO x /SiO x N y + SiN x structure. This additional layer will theoretically improve the rear side optical and electrical properties for the cell. By adjusting the flow ratio of N2O:NH3, SiO x /SiO x N y with different refractive indices were fabricated. Optimization of the SiO x film thickness showed a 0.11% efficiency gain in monofacial P‐type PERC cells because of higher short‐circuit current (I sc) and fill factor (FF), whereas optimization of the SiO x N y film refractive index showed a 0.05% efficiency gain in bifacial P‐type PERC cells due to the improvement of I sc and FF too. The current gain is believed to be benefited from the optimized light‐absorbing performance of the composite passivation layer structure. Furthermore, it is demonstrated that the refractive index of the SiN x capping layer had to be tuned after the incorporation of SiO x /SiO x N y to improve the cell efficiency.

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On the Defect Physics Behind Light and Elevated Temperature-Induced Degradation (LeTID) of Multicrystalline Silicon Solar Cells

Cited by 64 publications

References 31 publications

Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process

Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process

Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Enhanced Conversion Efficiency of Monocrystalline P‐Type Passivated Emitter and Rear Cells in Commercial Production Line by Improving Rear Side Passivation

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