On the crystallographic and statistical mechanical foundations of the forty-year old Hartman-Perdok theory

Bennema, P.

doi:10.1016/0022-0248(96)00043-7

Cited by 27 publications

(17 citation statements)

References 31 publications

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“…The value of C 2 can be directly obtained by replacing the derived c(S) relation in Eq. (34), so that…”

Section: Estimation Of Interfacial and Topological Parameters From Crmentioning

confidence: 97%

“…For close-packed surfaces x s is much lower than the value of 3 · 10 3 a 0 and so, higher values of the y 0 /(2ex s ) parameter are expected. Even for these surfaces of low morphological importance [34], the fraction of integrating molecules would be more than 80% of the estimated maximum flux. In the general case, the velocity of advancement of step during growth from vapour is…”

Section: Spiral Nucleation Modelmentioning

confidence: 98%

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Characterization of crystal growth using a spiral nucleation model

Martins

Rocha

2007

Surface Science

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“…The value of C 2 can be directly obtained by replacing the derived c(S) relation in Eq. (34), so that…”

Section: Estimation Of Interfacial and Topological Parameters From Crmentioning

confidence: 97%

Section: Spiral Nucleation Modelmentioning

confidence: 98%

Characterization of crystal growth using a spiral nucleation model

Martins

Rocha

2007

Surface Science

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“…The wurtzite c-axis is parallel to their longitudinal axis. Socalled growth striations 69,70 are present on the side face of the crystals and are mostly oriented along the c-axis. In a very few cases, growth striations perpendicular to the c-axis were observed (J. H. Edgar, personal communication).…”

Section: Raman Mapping: Stress and Crystalline Quality Mapping On Bulmentioning

confidence: 99%

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Kuball

2001

Surface & Interface Analysis

334

127

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The use of micro-Raman spectroscopy to monitor non-invasively GaN, AlGaN and AlN material parameters for process and growth monitoring/control is demonstrated. Concepts to determine the crystalline quality, the stress, the free carrier concentration, the aluminium composition and the temperature from the Raman modes are reviewed. Raman monitoring of processing and growth is illustrated on selected examples: the high-temperature processing of ion-implanted and non-implanted GaN layers, the Raman monitoring of AlGaN/GaN heterostructure field-effect transistors and the in situ Raman monitoring of GaN growth at elevated temperatures. Ultraviolet Raman spectroscopy has been employed to characterize material properties of GaN surface layers and GaN/AlGaN interfaces. Raman mapping is illustrated on bulk AlN crystals to investigate stress fields related to growth striations and defects.

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“…The attachment energy approach is also based on inter-molecular interactions and involves the calculation of the energy of attachment of a crystal slice of molecules onto a given crystal surface. This method is commonly employed to predict crystal morphologies, being based on the kinetic hypothesis that the rate of crystal growth of a given face is proportional to the attachment energy for that face (14,15). In the current context the attachment energies are employed to characterise and identify the crystal planes that are the most weakly interacting and could serve as the slip planes.…”

Section: Introductionmentioning

confidence: 99%