On the conversion of amorphous In2S3 thin films to polycrystalline In2S3 and to In2O3 through thermal oxidation process

Kumar, B. Hemanth; Kumar, M.C. Santhosh

doi:10.1016/j.mssp.2020.104983

Cited by 17 publications

(7 citation statements)

References 60 publications

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“…Such clusters were not observed on the thermally annealed films' surfaces. Similar clusters on the In2S3 films' surfaces were reported by Kumar and et al [47]. In this study, these kinds of clusters were identified as oxide crystallites and attributed to recrystallization in the films.…”

Section: Morphological Characterizationsupporting

confidence: 88%

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Akçay¹,

ERENLER²,

ÖZEN³

et al. 2023

Gazi University Journal of Science

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Indium sulfide (In2S3) thin films were deposited on soda lime glass (SLG) substrate by radio frequency (RF) magnetron sputtering technique at 150 °C and then thermally annealed under argon (Ar) atmosphere at 350 °C and 450 °C for a period of 30 min. The effect of post-thermal annealing on the structural, morphological, and optical properties of the films were investigated. The formation of the stable tetragonal β-In2S3 was confirmed by X-ray diffraction (XRD) analysis. It was seen that the thermal annealing treatment at 450 °C improved the crystallization of the films. The change in the surface morphology of the films depending on the post-thermal annealing process were determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses. The energy dispersive X-ray spectroscopy (EDX) analysis indicated that the films had slightly sulfur (S) deficit composition and the concentration of S slightly increased with the thermal annealing process. The room temperature (RT) photoluminescence (PL) spectra revealed that the films included sulfur vacancies (VS: donor), indium (In) vacancies (VIn: acceptor), indium interstitial (Ini: donor) and oxygen (O) in vacancy of sulfur (OVs: acceptor) defects with strong and broad emission bands at around 1.70 eV, 2.20 eV, and 2.71 eV.

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Section: Morphological Characterizationsupporting

confidence: 88%

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Akçay¹,

ERENLER²,

ÖZEN³

et al. 2023

Gazi University Journal of Science

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“…Through X-ray diffraction (XRD) characterization, we found that the as-deposited film is amorphous (Figure 2a). [12,17] To identify the phase of the synthesized materials, we collected the powder generated during the deposition process. Diffraction peaks belonging to In 2 S 3 were detected at 27.51°, 43.76°, and 47.91°(Figure S1, Supporting Information), which correspond to crystal planes of (311), (511), and (440) (JCPDS no.…”

Section: Resultsmentioning

confidence: 99%

“…Indium sulfide (In 2 S 3 ) is a kind of environmentally benign and highly stable n-type semiconductor, which is considered a promising buffer layer in photovoltaic devices due to its high carrier mobility (%17.6 cm 2 V À1 s À1 ) and large optical bandgap (2.0-2.8 eV). [11,12] In addition, In 2 S 3 has a slightly lower electron affinity, which leads to an optimized conduction band offset for Sb 2 Se 3 . [13] Notably, CIGS solar cell with substrate device structure using In 2 S 3 thin films as buffer layer has achieved PCE of 16.4%.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the amorphous properties caused by low-temperature annealing generates negative effect on the conductivity of the film and the quality of the heterojunction. [12,17] To cope with this problem, we applied ZnCl 2 solution to treat In 2 S 3 film, and prepared ZnCl 2 -modified In 2 S 3 buffer layer. Subsequently, we deposited the Sb 2 Se 3 light absorber layer through thermal evaporation method, and fabricated superstrate-type Sb 2 Se 3 solar cells with using In 2 S 3 as a buffer layer.…”

Section: Introductionmentioning

confidence: 99%

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Zinc Chloride‐Treated Indium Sulfide as Buffer Layer for Cd‐Free Antimony Selenide Solar Cells

et al. 2023

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In2S3, as a promising environmentally benign semiconductor, is used as a buffer layer in thin‐film solar cells due to its high electron mobility, low toxicity, and excellent thermal and chemical stability. The preparation of a high‐quality In2S3 film is crucial for the improvement of its carrier extraction ability and subsequent deposition of absorber layers. Herein, it is demonstrated for the first time that a posttreatment of In2S3 film with ZnCl2 solution is able to serve as buffer layer for constructing superstrate Sb2Se3 solar cells. The posttreatment with ZnCl2 not only prevents In2S3 from excessive oxidation during annealing process, but also facilitates the growth of (hk1) orientation of Sb2Se3, thereby improving the interfacial contact of In2S3/Sb2Se3. The improved heterojunction quality suppresses the carrier recombination at the interface, and enhances the charge extraction ability of In2S3. As a result, the power conversion efficiency of Sb2Se3 solar cell increases from 2.63% to 5.00%. Herein, a facile and effective strategy is provided for the application of In2S3 as the buffer layer in inorganic chalcogenide solar cells.

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“…In addition, the chemical bath deposition technique has attracted much attention chiefly because it is a simple low-temperature aqueous method [10]. The employment of the earlier mentioned methods led to an apparent improvement of physical properties [11]. In recent years, among the fierce research focus to finding the best energyefficiency compromise among next-generation solar cells, Perovskite Solar Cells (PSCs) have emerged as one of the most prominent candidates [12].…”

Section: Introductionmentioning

confidence: 99%

The Synthesis and the effect of Cu on optoelectronic qualities of β-In2S3 as a window layer for CIGS thin film solar cells

Alamoudi¹,

Timoumi

2022

Preprint

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In this paper, the vacuum thermal evaporation technique was used to investigate β-In2S3 doped with copper (Cu) as window layer thin film for solar cells. For various Cu doping levels, the characteristics of the thin films were studied utilizing structural, morphological, and optical characterization techniques, as well as dielectric testing. The research included X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, and energy-dispersive X-ray spectroscopy (EDS), Infrared analysis (FTIR), XPS, Ellipsometry and UV-NIR spectroscopy. The measurements demonstrated that the real and imaginary isolation constants were over the wavelength range and successfully estimated the Urbach energy (Eu) and band gap energy. Moreover, employing the Wemple-Didomenico model helped uncover the Cauchy coefficients’ refractive index and the dispersion and oscillation energies. Therefore, the results presented in this paper show that the use of Cu-In2S3 for perovskite cells offers a high-efficiency alternative in the solar energy field.

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On the conversion of amorphous In2S3 thin films to polycrystalline In2S3 and to In2O3 through thermal oxidation process

Cited by 17 publications

References 60 publications

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Zinc Chloride‐Treated Indium Sulfide as Buffer Layer for Cd‐Free Antimony Selenide Solar Cells

The Synthesis and the effect of Cu on optoelectronic qualities of β-In2S3 as a window layer for CIGS thin film solar cells

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