On the Carrier Concentration and Hall Mobility in GaN Epilayers

Ko, Chih-Hsin; Chang, Shoou‐Jinn; Su, Yan Kuin; Lan, Wen How; Chen, Jone-Fang; Kuan, Ta-Ming; Huang, Yu; Chiang, C. I.; Webb, J. B.; Lin, Wen Jen

doi:10.1143/jjap.41.l226

Cited by 23 publications

(10 citation statements)

References 4 publications

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“…Similarly, in the communication phase, defining the synchronization error yields (8) Furthermore, according to Fig. 2, the recovered signal is achieved by (9) and, by using (9), we have of the transmitted information signal s(t) and the error between and information single and the recovery signal, respectively. The above simulations confirm that the proposed scheme operates satisfactorily.…”

Section: Application To Secure Communicationmentioning

confidence: 99%

Anaerobic hydrogen production with an efficient carrier‐induced granular sludge bed bioreactor

Lee

et al. 2004

Biotech & Bioengineering

184

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A novel bioreactor containing self-flocculated anaerobic granular sludge was developed for high-performance hydrogen production from sucrose-based synthetic wastewater. The reactor achieved an optimal volumetric hydrogen production rate of ~7.3 L/h/L (7.150 mmol/d/L) and a maximal hydrogen yield of 3.03 mol H2/mol sucrose when it was operated at a hydraulic retention time (HRT) of 0.5 h with an influent sucrose concentration of 20 g COD/L. The gasphase hydrogen content and substrate conversion also exceeded 40 and 90%, respectively, under optimal conditions. Packing of a small quantity of carrier matrices on the bottom of the upflow reactor significantly stimulated sludge granulation that can be accomplished within 100 h. Among the four carriers examined, spherical activated carbon was the most effective inducer for granular sludge formation. The carrierinduced granular sludge bed (CIGSB) bioreactor was started up with a low HRT of 4-8 h (corresponding to an organic loading rate of 2.5-5 g COD/h/L) and enabled stable operations at an extremely low HRT (up to 0.5 h) without washout of biomass. The granular sludge was rapidly formed in CIGSB supported with activated carbon and reached a maximal concentration of 26 g/L at HRT = 0.5 h. The ability to maintain high biomass concentration at low HRT (i.e., high organic loading rate) highlights the key factor for the remarkable hydrogen production efficiency of the CIGSB processes.

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Section: Application To Secure Communicationmentioning

confidence: 99%

Anaerobic hydrogen production with an efficient carrier‐induced granular sludge bed bioreactor

Lee

et al. 2004

Biotech & Bioengineering

184

View full text Add to dashboard Cite

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“…[13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] Briefly, trimethylaluminum, trimethylgallium, trimethylindium, and ammonia were used as aluminum, gallium, indium, and nitrogen sources, respectively. Biscyclopentadienyl magnesium (CP 2 Mg) and disilane (Si 2 H 6 ) were used as the p-type and n-type doping sources, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Conventional nitridebased LEDs use semitransparent Ni/Au on Mgdoped GaN as the p-contact material. [1][2][3][4] However, the operation voltage of such LEDs is still high because of the low Mg-ionization percentage. The low Mg-ionization percentage will result in a highly resistive top p-GaN layer and a large metal/p-GaN contact resistance in nitride-based LEDs.…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Chang

et al. 2003

Journal of Elec Materi

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Nitride-based light-emitting diodes (LEDs) with Si-doped n ϩ -In 0.23 Ga 0.77 N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 ϫ 10 Ϫ2 ⍀-cm 2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 ϫ 10 0 ⍀-cm 2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP 2 Mg flow rate when we grow the underneath p-type GaN layer. The LEDoutput intensity was also found to be larger for samples with the SPS structure.

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“…Details of the growth conditions can be found elsewhere. [9][10][11][12][13][14][15][16][17] The InGaN/GaN MQW LED structure consists of a 30-nm-thick, GaN-nucleation layer grown at a low temperature of 560°C; a 4-mthick, Si-doped, n-GaN-cladding layer; an InGaN/ GaN MQW active region; a 50-nm-thick, Mg-doped, p-Al 0.15 Ga 0.85 N-cladding layer; and a 0.25-m-thick, Mg-doped, p-contact layer. The InGaN/GaN MQW active region consists of five pairs of 3-nm-thick, In 0.05 Ga 0.95 N-well layers and 12-nm-thick, GaNbarrier layers.…”

Section: Methodsmentioning

confidence: 99%

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Kuo

Chang

et al. 2003

Journal of Elec Materi

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The In 0.05 Ga 0.95 N/GaN, In 0.05 Ga 0.95 N/Al 0.1 Ga 0.9 N, and In 0.05 Ga 0.95 N/Al 0.18 Ga 0.82 N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al 0.1 Ga 0.9 N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximumoutput intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al 0.1 Ga 0.9 N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al 0.18 Ga 0.82 N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

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On the Carrier Concentration and Hall Mobility in GaN Epilayers

Cited by 23 publications

References 4 publications

Anaerobic hydrogen production with an efficient carrier‐induced granular sludge bed bioreactor

Anaerobic hydrogen production with an efficient carrier‐induced granular sludge bed bioreactor

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

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