On the atomistic details of electromigration-induced drift

Proost, Joris; D’Haen, Jan; Jin, Mingji; Verlinden, Bert

doi:10.1016/j.scriptamat.2003.10.005

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2004

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“…Grain structure is becoming increasingly important in the performance and reliability of on-chip IC interconnects [1,2]. For example, as critical dimensions of lines approach the electron mean free path in copper, the scattering of carriers by grain boundaries becomes a sizeable term in the RC delay of interconnects [3].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Microstructure Formation during Thin Film Deposition

Bloomfield

Cale

2004

Simulation of Semiconductor Processes and Devices 2004

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We describe an approach to studying grain structure formation in polycrystalline thin films during deposition from the vapor phase using a "grain continuum" representation of the solid. We employ three codes in concert to track the development of grains while accounting for ballistic transport and surface reaction kinetics. We show that higher precursor reactivities might well lead to higher void fractions near the substrate surface.

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Section: Introductionmentioning

confidence: 99%