On the Assumption of Detailed Balance in Prediction of Diffusive Transmission Probability During Interfacial Transport

Duda, John C.; Hopkins, Patrick E.; Smoyer, Justin L.; Bauer, Matthew L.; English, Timothy S.; Saltonstall, Christopher B.; Norris, Pamela M.

doi:10.1080/15567260903530379

Cited by 59 publications

(51 citation statements)

References 12 publications

(14 reference statements)

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“…When phonons cross an interface, they can change their frequency, in an inelastic process, or polarization, known as mode conversion, which can influence the thermal interface conductance [75]. In our work, we do not consider inelastic scattering.…”

Section: Appendix C: Effects Of Mode Conversionmentioning

confidence: 99%

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

et al. 2017

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Interfaces play an essential role in phonon-mediated heat conduction in solids, impacting applications ranging from thermoelectric waste heat recovery to heat dissipation in electronics. From the microscopic perspective, interfacial phonon transport is described by transmission coefficients that link vibrational modes in the materials composing the interface. However, direct experimental determination of these coefficients is challenging because most experiments provide a mode-averaged interface conductance that obscures the microscopic detail. Here, we report a metrology to extract thermal phonon transmission coefficients at solid interfaces using ab initio phonon transport modeling and a thermal characterization technique, time-domain thermoreflectance. In combination with transmission electron microscopy characterization of the interface, our approach allows us to link the atomic structure of an interface to the spectral content of the heat crossing it. Our work provides a useful perspective on the microscopic processes governing interfacial heat conduction.

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Section: Appendix C: Effects Of Mode Conversionmentioning

confidence: 99%

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

et al. 2017

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“…(19), namely, elastic scattering. 78 Therefore, under the isotropic and diffuse assumptions, h K as calculated via the DMM is given as…”

Section: →mentioning

confidence: 99%

Interfacial electron and phonon scattering processes in high-powered nanoscale applications.

Hopkins¹

2011

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The overarching goal of this Truman LDRD project was to explore mechanisms of thermal transport at interfaces of nanomaterials, specifically linking the thermal conductivity and thermal boundary conductance to the structures and geometries of interfaces and boundaries. Deposition, fabrication, and post possessing procedures of nanocomposites and devices can give rise to interatomic mixing around interfaces of materials leading to stresses and imperfections that could affect heat transfer. An understanding of the physics of energy carrier scattering processes and their response to interfacial disorder will elucidate the potentials of applying these novel materials to next-generation high powered nanodevices and energy conversion applications. An additional goal of this project was to use the knowledge gained from linking interfacial structure to thermal transport in order to develop avenues to control, or "tune" the thermal transport in nanosystems.4

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“…In these models, the mismatch in acoustic properties or vibrational density of states, limits the interfacial phonon transmission, and therefore restricts the phonon flux that transmits across the interface. As these models and further refinements of these models have been extensively described in the literature [32,33,47,[49][50][51][52][53], these derivations will not be reproduced here. Instead, an analytical formulation of a coupled DMM and quantum mechanical derivation of electron-phonon scattering at free electron metal/nonmetal substrate interfaces will be derived in the following subsection.…”

Section: Interfacial Thermal Transportmentioning

confidence: 99%

“…In this approach, the carriers are assumed to scatter diffusively and the transmission probability is determined by equating the thermal fluxes on either side of the interface via the Principle of Detailed Balance (in-depth treatments regarding these assumptions are discussed in Refs. [47,63]). In short, the fundamental assumption of diffuse scattering implies that incident carriers lose all memory of their initial direction after scattering at the interface.…”

Section: Interfacial Thermal Transportmentioning

confidence: 99%

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The Role of Electronic and Vibrational Scattering on Thermal Transport Across Multiple Interfaces in Nanostructures

Giri¹

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Rapid miniaturization and faster working speeds in electronic devices has led to challenges in their thermal mitigation. However, thermal conductivity of the constituent materials in the nano-devices, even though a very critical parameter in their design, is mostly overlooked and the thermal performance of the device is mainly controlled through packaging techniques. However, it would be advantageous for a diverse spectrum of technologies, which ultimately fail due to either high density of interfaces or due to high operating frequencies, to control and tune thermal properties at the submicron length scale and femtoto-picosecond time scales. Therefore, a comprehensive understanding of how heat flows across nanosystems that are mostly limited by interfacial thermal transport would prove to be quintessential for the design of various electronic devices. For example, the contribution of electronic thermal resistance across metal/semiconductor interfaces has been a subject of debate for the past several decades; understanding the intrinsic electron-electron, electron-phonon and electron-boundary scattering mechanisms in these devices could potentially lead to transistors with higher operating frequencies. Moreover, with the advent of new fabrication technologies, the role of phononic-driven thermal resistances across hybrid interfaces of inorganic/organic materials and amorphous semiconductor superlattices (SLs) with high density of interfaces has largely been unexplored.It is the goal of this work to comprehensively explore interfacial thermal transport in these material systems by understanding the fundamental scattering mechanisms of the energy carriers, which dominate thermal transport at various length and time scales. In this regard, a combination of time-domain thermoreflectance (TDTR) experiments and non-equilibrium molecular dynamics (NEMD) simulations will be implemented to achieve these goals.The nonequilibrium between electrons and phonons at metal/semiconductor interfaces in high frequency microelectronic devices serves as a bottleneck to heat transfer in these ii devices. To understand this phenomena, TDTR is used to probe the highly non-equilibrium condition that is induced due to pulse absorption by thin Au films deposited on various dielectric substrates. For electron temperature excursions of ≤ 3,500 K in Au, it is shown that while the increase in the excited carrier density increases the e-p coupling in the metal, the bond strength between the metal and the substrate dictates the energy transfer rate across the interface during this highly non-equilibrium time regime. Furthermore, at time scales when the electrons have fully thermalized with the lattice, electron-phonon coupling does not influence the phonon-driven thermal boundary conductance.Another phenomena that lead to device failure are the phonon-driven thermal boundary resistance in multilayered semiconductors used in technologies such as thermoelectric power generation or phase change memory devices. TDTR is used to simultaneously...

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On the Assumption of Detailed Balance in Prediction of Diffusive Transmission Probability During Interfacial Transport

Cited by 59 publications

References 12 publications

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

Interfacial electron and phonon scattering processes in high-powered nanoscale applications.

The Role of Electronic and Vibrational Scattering on Thermal Transport Across Multiple Interfaces in Nanostructures

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