On-state voltage drop based power limit detection of IGBT inverters

Trintis, Ionut; Ghimire, Pramod; Munk‐Nielsen, Stig; Rannestad, Bjørn

doi:10.1109/epe.2015.7311673

Cited by 10 publications

(6 citation statements)

References 11 publications

(11 reference statements)

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“…Applications [18], [56]- [59] As power device modules play a key role in the reliability of PESs, there is an increasing demand to perform the PC test close to real applications in order to minimize the uncertainty, which may be able to come from test conditions and to affect the test results.…”

Section: B Ac Power Cycling Test Circuit Close To Real Convertermentioning

confidence: 99%

“…15(b) for a single-phase system [58] and for three-phase system as shown in Fig. 15(c), where two load modules are operated by the same gate signal so that the half of load current flows in each load module [59].…”

Section: B Ac Power Cycling Test Circuit Close To Real Convertermentioning

confidence: 99%

“…15. Modified AC power cycling test topologies for different power device modules (a) single-phase PC test system [18], (b) single-phase PC test system for high-rated power device modules [58], and (c) three-phase PC test system for high-rated power device modules [59]. Fig.…”

Section: A Offline V Ce On and V F Measurementsmentioning

confidence: 99%

See 2 more Smart Citations

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Choi

Blaabjerg

Jørgensen

2018

IEEE Trans. Power Electron.

173

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Power cycling test is one of the important tasks to investigate the reliability performance of power device modules in respect to temperature stress. From this, it is able to predict the lifetime of a component in power converters. In this paper, representative power cycling test circuits, measurement circuits of wear-out failure indicators as well as measurement strategies for different power cycling test circuits are discussed in order to provide the current state of knowledge of this topic by organizing and evaluating current literature. In the first section of this paper, the structure of a conventional power device module and its related wear-out failure mechanisms with degradation indicators are discussed. Then, representative power cycling test circuits are introduced. Furthermore, on-state collector-emitter voltage (V C E O N ) and forward voltage (V F ) measurement circuits for wear-out condition monitoring of power device modules during power cycling test are presented. Finally, different junction temperature measurement strategies for monitoring of solder joint degradation are explained.Index Terms-Failure mechanism, insulated gate bipolar transistor (IGBT), power cycling (PC) test, power device module, reliability, wear-out failure.

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Section: B Ac Power Cycling Test Circuit Close To Real Convertermentioning

confidence: 99%

Section: B Ac Power Cycling Test Circuit Close To Real Convertermentioning

confidence: 99%

See 1 more Smart Citation

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Choi

Blaabjerg

Jørgensen

2018

IEEE Trans. Power Electron.

173

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show abstract

“…Currently, IGBT module on-state voltage measurement methods can be divided into two main categories. First, additional circuits are installed realizing the on-line measurement which have been widely used in recent years and applied in junction temperature measurement [35] or bond wire failure prediction [36]. What is more, with the development of wide band-gap semiconductors and increasing switching speed, [37] provided a fast voltage clamp circuit with better accuracy and higher bandwidth but that suffered from disturbances.…”

Section: Introductionmentioning

confidence: 99%

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Kong

Ouyang

et al. 2019

Energies

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The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

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“…In order to verify the feasibility of the thermal model, the simulator is required. Various simulators have been developed [24][25][26][27][28][29]. The simulators can operate close to the converter systems applied to real applications such as inductive loads and motors.…”

Section: Introductionmentioning

confidence: 99%

Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules

Kim

Cho

et al. 2019

Electronics

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This paper presents the development of a hardware simulator based on the junction-temperature of insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs). The MMC consists of various power-electronics components, and the IGBT is the main factor determining the lifetime of the MMC. The failure of IGBTs is mostly due to the junction-temperature swing; thus, the thermal profile of the IGBT should be established to predict the lifetime. The thermal behavior depends on the current flowing to the IGBT, and the load-current profile is related to the application. To establish the thermal profile of the IGBT, the proposed hardware simulator generates various shapes of output currents while the junction temperature is measured. Additionally, a controller design is presented for simulation of the arm current, which includes a direct current component as well as an alternative current component with a fundamental frequency. The validity and performance of the proposed hardware simulator and its control methods are analyzed according to various experimental results.

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On-state voltage drop based power limit detection of IGBT inverters

Cited by 10 publications

References 11 publications

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules

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