On possible binary molecular structure in the AsTeSe amorphous system

Mackowski, Jean-Marie; Samueli, J.J.; Kumurdjian, P.

doi:10.1016/0022-3093(74)90055-6

Cited by 6 publications

(2 citation statements)

References 12 publications

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“…This suggests that the single crystallization peak might be two coincident peaks superimposed. The obtained value of T o agrees with those obtained by Mackowski [7] (~ t43 ~ and E1-Fouly and Edmond [6] (147~ The DTA scan in Fig. 1 indicates that the initially homogeneous phase (single To) separates into two compositions as heating exceeds the T o cut-off.…”

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confidence: 88%

Thermal effects on glass As2Se3·As2Te3

Kotkata

Labib

Rahman

1988

Journal of Thermal Analysis

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The DTA trace of the chalcogenide glass As2Se 3 9 AszTe 3 shows a single glass transition at 142 ~ a single crystallization exotherm depending on the heating rate, and two melting endotherms, at 290 '~C and 312 "C. The X-ray diffraction for a crystallized sample indicates the presence of two solid solution phases: Te in AszS % (rich in Se) and Se in AszT % (rich in Te), confirming that the single crystallization peak of the initially homogeneous phase (single 7~q) represents two coincident peaks superimposed. The crystallization of the glass phase is also clearly manifested in the time-dependence of the electrical conductivity and microphotography.The structure and properties of the stoichiometric chalcogenide glass As2Se 3 have been extensively studied. This compound may readily be prepared in the glassy state, having a definite structure containing only As-Se bonds [1]. Replacement of Se by Te in this compound leads to the formation of As Te bonds in place of As-Se bonds, and this affects all the structural properties. The degree of change depends on the Te content of the ternary compound AszSe3-As2Te 3 [2,3]. Such a dependence is linear for the valence bond concentration (As-Te or As-Se), hydrostatic density, dc conductivity and activation energy of conduction, and nonlinear for the Vickers hardness, while there is a discontinuity for the melting temperature, thermal conductivity and activation energy of crystallization. The discontinuity appears at equal proportions of Se and Te, where there is a dip at the composition As2Se 3 9 As2Te 3 .In this paper, the effects of thermal annealing on the electrical conduction and structural changes of the semiconductor glass AszSe3.AszTe 3 have been studied. The sample preparation and the measuring arrangements for DTA, X-ray diffraction and dc conductivity were described in previous publications [2 5].

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confidence: 88%

Thermal effects on glass As2Se3·As2Te3

Kotkata

Labib

Rahman

1988

Journal of Thermal Analysis

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“…mental. -Des carottes de AS35 Te2sGe16S21 ont été préparées par fusion du mélange puis solidification de l'alliage sous vide [11].…”

Section: Préparation Des éChantillons Et Dispositif Expéri-unclassified

Etude de la conduction électrique dans le semiconducteur chalcogénure As35Te28Ge16S21 en liaison avec la constitution de charges d'espace

Félix

Fornazero

Mackovski

et al. 1980

Rev. Phys. Appl. (Paris)

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2014 L'étude des propriétés électriques d'échantillons épais de As35Te28Ge16S21 a permis de mettre en évidence des caractéristiques inhabituelles pour les chalcogénures ; en particulier un effet de mémoire apparaît sur la conductivité électronique mesurée à basse température. Nous proposons un modèle basé sur l'existence de couches superficielles plus résistantes, entraînant la formation de charges d'espace qui seraient à l'origine des phénomènes observés.

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ESR of Mn2+ in AsSe glasses

Wang

Shen

1983

Journal of Non-Crystalline Solids

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On possible binary molecular structure in the AsTeSe amorphous system

Cited by 6 publications

References 12 publications

Thermal effects on glass As2Se3·As2Te3

Thermal effects on glass As2Se3·As2Te3

Etude de la conduction électrique dans le semiconducteur chalcogénure As35Te28Ge16S21 en liaison avec la constitution de charges d'espace

ESR of Mn2+ in AsSe glasses

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