On new analogs of TlSe-type semiconductor compounds

Гусейнов, Г. Г.; Abdullayev, G.B.; Bidzinova, S.M.; Seidov, F. M.; Исмайлов, М. И.; Pashayev, A. M.

doi:10.1016/0375-9601(70)90585-2

Cited by 91 publications

(32 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Guseinov et al studied many physical properties of similar type thallium rare earth dichalcogenides viz. T1LuSe 2 , T1YbSe 2 , T1TmSe 2 , T1ErSe 2 , T1HoSe 2 , T1DySe 2 , T1TbSe 2 , T1SmSe 2 , T1GaSe 2 , TlInSe 2 [7]. To the best of our knowledge, a little study was made on these dichalcogenides.…”

Section: Introductionmentioning

confidence: 99%

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX₂ (X = S, Se, Te)

2017

View full text Add to dashboard Cite

In the present research paper, we investigated spin polarized electronic, magnetic, thermodynamic, and transport properties of thallium gadolinium dichalcogenides TlGdX2 (X = S, Se, Te) using density functional theory. Electronic structure reveals that all the three compounds are wide band gap semiconductors which are beneficial for good thermoelectric performance. Calculated magnetic moment of TlGdX2 is found to be in good agreement with available experimental values and mainly dominant by Gd 3+ ions. Semiclassical Boltzmann transport theory has been used to calculate the Seebeck coefficient and electrical conductivity for the proposed dichalcogenides. Calculated values of the Seebeck coefficient and electrical conductivity are found to be consistent with available experimental values in literature. Thermodynamic properties of TlGdX2 have also been estimated for the first time and explained on the basic facts.

show abstract

Section: Introductionmentioning

confidence: 99%

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX₂ (X = S, Se, Te)

2017

View full text Add to dashboard Cite

show abstract

“…The first investigations of semiconductor properties of TlInS 2 and TlGaSe 2 were performed by the authors of [13][14]. Later dielectric properties, and ferroelectric phase transitions in the same compounds were studied [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Phase relations in ferroelectric/ferromagnetic TlInS2–TlCoS2 and TlGaSe2–TlCoSe2 systems

Seyidov

Керимова

Veliyev

et al. 2008

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…TlGaSe 2 and CuGaSe 2 belong to the III-III-VI 2 and I-III-VI 2 families of semiconductors and are of considerable practical interest as attractive materials for optoelectronic applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…INTRODUCTION TlGaSe 2 and CuGaSe 2 belong to the III-III-VI 2 and I-III-VI 2 families of semiconductors and are of considerable practical interest as attractive materials for optoelectronic applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].TlGaSe 2 , a typical incomplete-valence semiconductor, has a specific crystal structure in which Tl + is in octahedral coordination, and Ga 3+ is in tetrahedral coordination [1][2][3].CuGaSe 2 has the chalcopyrite structure, in which Cu and Ga form an ordered sublattice. The unit cell of CuGaSe 2 contains eight atoms (2Cu, 2Ga, and 4Se) and has a c / a ratio close to 2 [11,12].…”

mentioning

confidence: 99%

See 1 more Smart Citation

Phase diagram of the TlGaSe2-CuGaSe2 system

et al. 2005

View full text Add to dashboard Cite

Matiev, Khamkhoev, Evloev. INTRODUCTION TlGaSe 2 and CuGaSe 2 belong to the III-III-VI 2 and I-III-VI 2 families of semiconductors and are of considerable practical interest as attractive materials for optoelectronic applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].TlGaSe 2 , a typical incomplete-valence semiconductor, has a specific crystal structure in which Tl + is in octahedral coordination, and Ga 3+ is in tetrahedral coordination [1][2][3].CuGaSe 2 has the chalcopyrite structure, in which Cu and Ga form an ordered sublattice. The unit cell of CuGaSe 2 contains eight atoms (2Cu, 2Ga, and 4Se) and has a c / a ratio close to 2 [11,12].In this paper, we report phase relations in the TlGaSe 2 -CuGaSe 2 system over the entire composition range.EXPERIMENTAL TlGaSe 2 -CuGaSe 2 alloys were prepared from presynthesized TlGaSe 2 and CuGaSe 2 . The starting chemicals used were 3N thallium, OSCh 11-4 copper, OSCh 17-4 selenium, and 3N gallium. To remove the oxide film and other contaminations, Cu was etched in 5% HNO 3 for 8-10 min and then washed with running distilled water. Thallium was distilled in vacuum.Ampules (thick-walled silica, 25-mm inner diameter) were cleaned in 40% HF for 5 min, rinsed with distilled water, and then calcined in vacuum at 1400 K. The inner wall of the ampules was graphitized to prevent reaction with the melt. TlGaSe 2 and CuGaSe 2 were synthesized by reacting stoichiometric elemental mixtures at 1150 and 1450 K, respectively, for 5 h at a residual pressure of 10 -3 Pa in two-zone furnaces. The melt was homogenized by vigorous stirring. The TlGaSe 2 and CuGaSe 2 samples thus prepared were then equilibrated by annealing for 240 h at 1000 and 900 K, respectively.The phase purity and homogeneity of TlGaSe 2 (dark cherry) and CuGaSe 2 (dark gray) were checked by differential thermal analysis (DTA) and x-ray diffraction (XRD).TlGaSe 2 -CuGaSe 2 samples (6 g) were prepared by a similar procedure.DTA was carried out at a heating rate of Ӎ 10° C/min using a programmed temperature controller [17], N-306 XY recorder, and high-sensitivity amplifier. The temperature was measured by PR-30/6 Pt/Pt-Rh thermocouples calibrated against the melting points of Bi, Pb, Se, Te, Sb, KCl, NaCl, Na 2 SO 4 , Ag, and Cu. The accuracy in temperature measurements was ± 5°ë . The samples (1 g) were sealed under vacuum in silica Stepanov vessels 5 mm in inner diameter. As a reference substance, we used calcined alumina.Electrical resistivity was measured using Shch 31 and V7-30 multirange voltmeters with an accuracy of 0.05 and 5%, respectively. Fine-particle samples for resistivity measurements were pressed into silica capillaries 10 mm in length and 2.7 mm in diameter. The ends of the capillaries were soldered with indium, to which copper leads were attached.Phase compositions were determined by XRD on a DRON-3 powder diffractometer (Ni-filtered Cu K α radiation, 40 kV, 20 mA, continuous scan rate of 1 ° (2 θ )/min, rotating sample). RESULTS AND DISCUSSIONThe T -x phase diagram of the TlGaSe 2 -...

show abstract

On new analogs of TlSe-type semiconductor compounds

Cited by 91 publications

References 3 publications

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX₂ (X = S, Se, Te)

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX₂ (X = S, Se, Te)

Phase relations in ferroelectric/ferromagnetic TlInS2–TlCoS2 and TlGaSe2–TlCoSe2 systems

Phase diagram of the TlGaSe2-CuGaSe2 system

Contact Info

Product

Resources

About

On new analogs of TlSe-type semiconductor compounds

Cited by 91 publications

References 3 publications

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX2 (X = S, Se, Te)

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX2 (X = S, Se, Te)

Phase relations in ferroelectric/ferromagnetic TlInS2–TlCoS2 and TlGaSe2–TlCoSe2 systems

Phase diagram of the TlGaSe2-CuGaSe2 system

Contact Info

Product

Resources

About

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX₂ (X = S, Se, Te)

First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX₂ (X = S, Se, Te)