On moderate inversion/saturation regions as approximations to “reconciliation” model

Filanovsky, I.M.; Jarvenhaara, J.K.; Tchamov, N.T.

doi:10.1109/ccece.2016.7726696

Cited by 5 publications

(2 citation statements)

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“…The model (1) usually (for wide and long transistors) provides a good correspondence between theoretical, simulation and experimental results [21][22] in typical CMOS technologies. If the saturation term can be neglected ( DS V is sufficiently high), the current can be approximated as gI design approach (we are using in (3) slightly different current normalization).…”

Section: New Transistor Modelmentioning

confidence: 86%

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Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion

Filanovsky

Oliveira

Tchamov

2019

IEEE Trans. Circuits Syst. I

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The paper describes analysis of nonlinear effects in a MOS transistor operating in moderate inversion and saturation. The dependence of the drain current on the gate-source and drain-source voltages is described using a modified version of the "reconciliation" model developed by Y. Tsividis. In the new model the current components, which correspond to the terms depending exponentially on normalized gate-source or drain-source modulating sinusoidal voltages, are presented using modified Bessel functions. This approach allows one to find the first, second and third harmonics of the drain current caused by the gate-source or drain-source voltage sinusoidal modulation, and find also the intermodulation terms produced by these two modulating voltages. The results are applied to set the requirements to the gate-source and drain-source bias voltages in design of low-distortion and/or low-voltage amplifiers. It is shown that the realization of the stage with the zero value of third order harmonic requires extremely tight tolerances for the threshold voltage. The suppression of intermodulation terms requires increased drain-source voltage. These recommendations are confirmed by simulations.

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Section: New Transistor Modelmentioning

confidence: 86%

“…The first two terms of (7) (with their sum squared) describe the transition from moderate to strong inversion [21]. (8) One can develop the expression for / out D gI which can be used in calculation of nonlinearities as well.…”

Section: New Transistor Modelmentioning

confidence: 99%