2004
DOI: 10.1142/s021949880400085x
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ON m-FOLD STABLE IDEALS

Abstract: In this paper, we introduce m-fold stable ideals and show that m-fold stable range for ideals is invariant under matrix extension. Also we prove that every m-fold stable ideal is right and left symmetric.Let R be an associative ring with identity. We say that R is an m-fold stable ring in case when a 1 R + b 1 R = R, . . . , a m R + b m R = R, there exists a y ∈ R such that a 1 + b 1 y, . . . , a m + b m y ∈ U (R). The m-fold stable range condition is very useful in algebra K-theory (see [3]). The main purpose… Show more

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Cited by 4 publications
(5 citation statements)
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“…Quantum chemistry calculations were performed using the Density Functional Theory (DFT) by Gaussian09 package. [40] The electronic configuration of all atoms was described by 6-31G(d,p) basis set. [41][42][43][44][45][46][47] The B3LYP [48] functional was employed for rigid potential energy scan and geometry optimizations.…”
Section: Quantum Chemistry Calculationsmentioning
confidence: 99%
“…Quantum chemistry calculations were performed using the Density Functional Theory (DFT) by Gaussian09 package. [40] The electronic configuration of all atoms was described by 6-31G(d,p) basis set. [41][42][43][44][45][46][47] The B3LYP [48] functional was employed for rigid potential energy scan and geometry optimizations.…”
Section: Quantum Chemistry Calculationsmentioning
confidence: 99%
“…[13,14] Both the CVD (chemical vapor deposition) [13] and ALD (atomic layer deposition) [14] techniques could be used to deposit thin copper metal films for semiconductor, flat-panel display, and other devices. Due to its high conductivity, resistance to electromigration, and relatively low cost, copper is currently viewed as the most promising metal for integrated circuit interconnects of the future.…”
Section: ð1þmentioning
confidence: 99%
“…Due to its high conductivity, resistance to electromigration, and relatively low cost, copper is currently viewed as the most promising metal for integrated circuit interconnects of the future. The modern microelectronics industrial criteria [14] for a Cu metal precursor include sufficient volatility at 0.1 -10 torr and 50 -200 8C, reducibility with a volatile chemical, and the lack of halogens and oxygen in all reagents involved. This set of initial requirements puts most serious limitations and impediments on the design of molecular precursors for Cu CVD and ALD processes.…”
Section: ð1þmentioning
confidence: 99%
“…Of all the remote factors contributing to uncertainties in the projections of the NPSH, model differences in the response of tropical precipitation is suggested to play a significant role (Baker et al, 2019;X. Chen et al, 2020;M. Chen et al, 2019;Park & Lee, 2021).…”
Section: Introductionmentioning
confidence: 99%