On-Line Thickness Measurement for Two-Layer Systems on Polymer Electronic Devices

Grassi, Ana Pérez; Tremmel, Anton J.; Koch, Alexander W.; El‐Khozondar, Hala J.

doi:10.3390/s131115747

Cited by 7 publications

(3 citation statements)

References 22 publications

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“…Such T sm ( λ ) is tangent to and touches either of its envelopes T + ( λ ) or T − ( λ ) in several points, whose respective wavelengths λ t are named tangency wavelengths. Importantly, EM does not use any dispersion model of n ( λ ) and/or k ( λ ), unlike the ellipsometric methods [ 31 , 32 ]; keeping in mind that such dispersion models are usually inaccurate for doped films [ 33 , 34 ], organic films [ 35 , 36 ], and mechanically stressed films [ 37 ].…”

Section: Introductionmentioning

confidence: 99%

Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

et al. 2021

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Three means are investigated for further increasing the accuracy of the characterization of a thin film on a substrate, from the transmittance spectrum T(λ) of the specimen, based on the envelope method. Firstly, it is demonstrated that the accuracy of characterization, of the average film thickness d¯ and the thickness non-uniformity ∆d over the illuminated area, increases, employing a simple dual transformation utilizing the product T(λ)xs(λ), where Tsm(λ) is the smoothed spectrum of T(λ) and xs(λ) is the substrate absorbance. Secondly, an approach is proposed for selecting an interval of wavelengths, so that using envelope points only from this interval provides the most accurate characterization of d¯ and ∆d, as this approach is applicable no matter whether the substrate is transparent or non-transparent. Thirdly, the refractive index n(λ) and the extinction coefficient k(λ) are computed, employing curve fitting by polynomials of the optimized degree of 1/λ, instead of by previously used either polynomial of the optimized degree of λ or a two-term exponential of λ. An algorithm is developed, applying these three means, and implemented, to characterize a-Si and As98Te2 thin films. Record high accuracy within 0.1% is achieved in the computation of d¯ and n(λ) of these films.

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Section: Introductionmentioning

confidence: 99%

Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

et al. 2021

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“…The dispersion methods, including all spectroscopic ellipsometry methods, implement a dispersion model represented by a formula containing at least one of the components of the complex refractive index [ 9 , 10 ]. However, dispersion models are usually not accurate for doped films [ 11 , 12 ], organic films [ 13 , 14 ], and mechanically stressed films [ 15 ]. In the hybrid methods, a dispersion model or independent measurement of the film thickness is used, which is often insufficiently accurate, together with T ( λ ) [ 13 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

Optical Characterization of AsxTe100−x Films Grown by Plasma Deposition Based on the Advanced Optimizing Envelope Method

et al. 2020

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Three AsxTe100−x films with different x and dissimilar average thickness d ¯ are characterized mainly from one interference transmittance spectrum T(λ = 300 to 3000 nm) of such film on a substrate based on the advanced optimizing envelope method (AOEM). A simple dual transformation of T(λ) is proposed and used for increasing the accuracy of computation of its envelopes T+(λ) and T−(λ) accounting for the significant glass substrate absorption especially for λ > 2500 nm. The refractive index n(λ) of As40Te60 and As98Te2 films is determined with a relative error <0.30%. As far as we know, the As80Te20 film is the only one with anomalous dispersion and the thickest, with estimated d ¯ = 1.1446 nm, ever characterized by an envelope method. It is also shown and explained why the extinction coefficient k(λ) of any of the three AsxTe100−x films is computed more accurately from the quantity Ti(λ) = [T+(λ)T−(λ)]0.5 compared to its commonly employed computation from T+(λ). The obtained results strengthen our conviction that the AOEM has a capacity for providing most accurate optical characterization of almost every dielectric or semiconductor film with d ¯ > 300 nm on a substrate, compared to all the other methods for characterization of such films only from T(λ).

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“…The present special issue addresses, inter alia , optical sensor principles [ 1 – 3 ], fiber-optic sensors [ 3 – 14 ], surface analysis [ 10 , 15 ], thin film measurement [ 15 ], FGB sensors [ 6 ], and biochemical sensors [ 16 ]. In particular, an efficient combination of optics, electronics and micromechanics is a basis for the development of novel measurement instrumentation.…”

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confidence: 99%

Introduction to the Special Issue on “Optomechatronics”

Koch

2014

Sensors

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The field of optomechatronics combines the synergistic effects of optics, mechanics and electronics for efficient sensor development. Optical sensors for the measurement of mechanical quantities, equipped with appropriate electronic signal (pre)processing have a wide range of applications, from surface testing, stress monitoring, and thin film analysis to biochemical sensing. The aim of this special issue is to provide an overview of current research and innovative applications of optomechatronics in sensors. [...]

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On-Line Thickness Measurement for Two-Layer Systems on Polymer Electronic Devices

Cited by 7 publications

References 22 publications

Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

Optical Characterization of AsxTe100−x Films Grown by Plasma Deposition Based on the Advanced Optimizing Envelope Method

Introduction to the Special Issue on “Optomechatronics”

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