On-line nanolithography using electron beam-induced deposition technique

Hübner, Uwe; Plontke, R.; Blume, M.; Reinhardt, Alexandre; Koops, Hans W. P.

doi:10.1016/s0167-9317(01)00476-2

Cited by 33 publications

(29 citation statements)

References 3 publications

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“…Until recently, the size of the deposited structures obtained experimentally always exceeded the diameter of the electron beam used to produce them. It has also been observed 6,7 that D is not constant in time, but follows an evolution as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 81%

“…13 Based on this information, other research groups have been able to develop scaling algorithms and general equations valid for larger groups of molecules. Nevertheless, hardly any information exists on the metalcarrying compounds used in EBID, in particular, W͑CO͒ 6 and Fe͑CO͒ 5 . This lack of information caused the few authors concerned with EBID resolution to use very simplistic threshold functions to replace the real cross sections 14,15 or to even abandon their research at this stage.…”

Section: Electron-impact-induced Dissociationmentioning

confidence: 99%

“…Hübner et al 6 and Hiroshima and Komuro 25 reported EBID experiments with a 2-nm beam producing dots with a minimum lateral size of 15-20 nm. Our simulation results indicate that only the SE emerged from the target surface …”

Section: -4mentioning

confidence: 99%

“…The discrepancy between the primary beam diameter and the diameter of the dot response suggests that the PE are not the only players involved in the deposition process, and many authors have proposed the idea that SE might be an important factor in EBID. 6,[9][10][11] Our goal is to quantify and explain the role of SE in EBID lateral resolution. The problem is simplified by considering a thin target, where only the SE1 play an important role and where the SE2 can be neglected.…”

Section: Introductionmentioning

confidence: 99%

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Spatial resolution limits in electron-beam-induced deposition

Silvis-Cividjian

Hagen

Kruit

2005

Journal of Applied Physics

101

116

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Electron-beam-induced deposition ͑EBID͒ is a versatile micro-and nanofabrication technique based on electron-induced dissociation of metal-carrying gas molecules adsorbed on a target. EBID has the advantage of direct deposition of three-dimensional structures on almost any target geometry. This technique has occasionally been used in focused electron-beam instruments, such as scanning electron microscopes, scanning transmission electron microscopes ͑STEM͒, or lithography machines. Experiments showed that the EBID spatial resolution, defined as the lateral size of a singular deposited dot or line, always exceeds the diameter of the electron beam. Until recently, no one has been able to fabricate EBID features smaller than 15-20 nm diameter, even if a 2-nm-diam electron-beam writer was used. Because of this, the prediction of EBID resolution is an intriguing problem. In this article, a procedure to theoretically estimate the EBID resolution for a given energetic electron beam, target, and gaseous precursor is described. This procedure offers the most complete approach to the EBID spatial resolution problem. An EBID model was developed based on electron interactions with the solid target and with the gaseous precursor. The spatial resolution of EBID can be influenced by many factors, of which two are quantified: the secondary electrons, suspected by almost all authors working in this field, and the delocalization of inelastic electron scattering, a poorly known effect. The results confirm the major influence played by the secondary electrons on the EBID resolution and show that the role of the delocalization of inelastic electron scattering is negligible. The model predicts that a 0.2-nm electron beam can deposit structures with minimum sizes between 0.2 and 2 nm, instead of the formerly assumed limit of 15-20 nm. The modeling results are compared with recent experimental results in which 1-nm W dots from a W͑CO͒ 6 precursor were written in a 200-kV STEM on a 30-nm SiN membrane.

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Section: Introductionmentioning

confidence: 81%

Section: Electron-impact-induced Dissociationmentioning

confidence: 99%

Section: -4mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Spatial resolution limits in electron-beam-induced deposition

Silvis-Cividjian

Hagen

Kruit

2005

Journal of Applied Physics

101

116

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“…Figure 2 shows a typical example. An MWNT is soldered on to an atomic force microscope cantilever via EBID [24] by introducing W(CO) 6 as precursors [25]. The MWNT is 15 nm in diameter and has a 2.26 mm protruding length.…”

Section: Construction and Calibration Of Nanotube-based Multi-functiomentioning

confidence: 99%

Nanotube multi-functional nanoposition sensors

Liu

Dong

Arai

et al. 2005

Proceedings of the Institution of Mechanical Engineers, Part N:

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Prototypes of individual carbon-nanotube-based nanoposition sensors for detecting approaching, touching, and sliding positions are presented on the bases of the interelectrodedistance-based field emission current change of a nanotube emitter and the resistance change caused by sliding motion of nanotube on an Au substrate. The sensors are constructed by nanorobotic manipulation and featured by their compact sizes, simple structures, and potential high resolutions. A field-emission-based sensor is characterized by the non-contact configuration and is suitable for approximity sensing or as a position detector for other kinds of sensor. The perfect linearity of the resistance of a nanotube sliding on an Au substrate promises very high resolution for distance measurement. The sensitivity of these sensors has been found to be 7 pA per 100 nm and 0.24 nA/nm respectively in experiments. The transient state from emission to transport can be used for a touching sensor, and a 52 pA jump has been detected.

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Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

et al. 2006

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Summary: Electron beam-induced deposition (EBID) provides a simple way to fabricate submicron-or nanometerscale structures from various elements in a scanning electron microscope (SEM). The growth rate and shape of the deposits are influenced by many factors. We have studied the growth rate and morphology of EBID-deposited nanostructures as a function of the tungsten hexafluoride (WF 6 ) and tetraethylorthosilicate (TEOS) precursor gas pressure and growth time, and we have used Monte Carlo simulations to model the growth of tungsten and silicon oxide to elucidate the mechanisms involved in the EBID growth. The lateral radius of the deposit decreases with increasing pressure because of the enhanced vertical growth rate which limits competing lateral broadening produced by secondary and forward-scattered electrons. The morphology difference between the conical SiO x and the cylindrical W nanopillars is related to the difference in interaction volume between the two materials. A key parameter is the residence time of the precursor gas molecules. This is an exponential function of the surface temperature; it changes during nanopillar growth and is a function of the nanopillar material and the beam conditions.

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On-line nanolithography using electron beam-induced deposition technique

Cited by 33 publications

References 3 publications

Spatial resolution limits in electron-beam-induced deposition

Spatial resolution limits in electron-beam-induced deposition

Nanotube multi-functional nanoposition sensors

Pressure effect of growing with electron beam‐induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

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