On green function averaging of a disordered crystal

Ivanchenko, Yu. M.; Lisyanskiǐ, A. A.

doi:10.1016/0378-4371(81)90188-6

Cited by 2 publications

(2 citation statements)

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“…We choose the Hamiltonian of an electron in the form (101) Here, H 0 is the Hamiltonian of a free electron, V 0 (r -R n ) is the potential of interaction of the electron with the jth atom of the host material, and V(r -R n ) is the per turbation potential of an impurity atom.…”

Section: Determination Of the Impurity Potentials In Isoelectronic Almentioning

confidence: 99%

“…First of all, this relates to generalization of the self consistent single site approximation in cumulant expansions. Very important and promising results in this field were obtained in [101,102]. How ever, no numerical application of these results to the studies of the electronic structure of alloys has been found so far.…”

Section: Unsolved Problems and Prospectsmentioning

confidence: 99%

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Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches

Zakharov

2015

Semiconductors

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Methods of predicting the electronic structure of disordered semiconductor alloys involving mainly isoelectronic substitution are reviewed. Special emphasis is placed on analytical methods of studying currently available models of alloys. An approximate equation for the localization threshold of electronic states in the Lifshitz model is considered, and the inaccuracy of this equation is estimated. The contributions of the perturbation potential of an individual impurity and of crystal lattice distortions in the vicinity of the impurity center are analyzed on the basis of the Faddeev equations. The contributions of intrinsic impurity potentials and volume effects to the formation of the electronic structure of semiconductor alloys are esti mated. Methods of calculating matrix elements of the perturbation potentials of isoelectronic impurities in alloys with consideration for deformation effects are considered. The procedure of calculating the composi tional dependence of the band gap of multicomponent alloys is described. A comparative analysis of various methods for predicting the formation of electronic states bound at individual isoelectronic impurities in semi conductors is conducted. The theory of the energy spectrum of charged impurities in isoelectronic alloys is presented.

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Section: Determination Of the Impurity Potentials In Isoelectronic Almentioning

confidence: 99%

Section: Unsolved Problems and Prospectsmentioning

confidence: 99%