Quantum Nanophotonic Materials, Devices, and Systems 2020 2020
DOI: 10.1117/12.2567202
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On-demand generation of entangled photons in the telecom C-band

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Cited by 6 publications
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“…At least several approaches have been used, e.g., utilizing the strain-reducing layer [35][36][37][38], growing on a metamorphic buffer layer [34,39,40], multistacking of QDs [41], or growth on a seeding layer [42]. For GaAs-based QD structures, single-photon emission at the third telecommunication window has been demonstrated only using a special metamorphic buffer layer grown by Metalorganic chemical vapor deposition (MOCVD) [43], with reported emission of entangled photons [44] and emission of indistinguishable photons [45], also with the possibility of precise piezo-tuning [46] and generation of single-photons on demand [47]. However, the growth process of such QDs is very demanding and prone to technological complications, deteriorating the optical quality of the final material [48], which is probably the reason for still lacking results on high-quality and high-brightness photonic structures out of that material system at 1.55 µm [11,40].…”
Section: Introductionmentioning
confidence: 99%
“…At least several approaches have been used, e.g., utilizing the strain-reducing layer [35][36][37][38], growing on a metamorphic buffer layer [34,39,40], multistacking of QDs [41], or growth on a seeding layer [42]. For GaAs-based QD structures, single-photon emission at the third telecommunication window has been demonstrated only using a special metamorphic buffer layer grown by Metalorganic chemical vapor deposition (MOCVD) [43], with reported emission of entangled photons [44] and emission of indistinguishable photons [45], also with the possibility of precise piezo-tuning [46] and generation of single-photons on demand [47]. However, the growth process of such QDs is very demanding and prone to technological complications, deteriorating the optical quality of the final material [48], which is probably the reason for still lacking results on high-quality and high-brightness photonic structures out of that material system at 1.55 µm [11,40].…”
Section: Introductionmentioning
confidence: 99%