On-current modeling of large-grain polycrystalline silicon thin-film transistors

Farmakis, Filippos; Brini, J.; Kamarinos, G.; Angelis, Constantinos T.; Dimitriadis, C. A.; Miyasaka, Mitsutoshi

doi:10.1109/16.915695

Cited by 83 publications

(44 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When strain is applied, these grain boundaries tend to get closer or move apart leading to a change in grain boundary resistance. 20,21 This change in resistance is captured as a change in mobility, as observed in our results. It also explains the anisotropic effect of strain on mobility, as observed in our results.…”

Section: For Details) Mobilities Calculated According Tosupporting

confidence: 76%

Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors

et al. 2012

View full text Add to dashboard Cite

Section: For Details) Mobilities Calculated According Tosupporting

confidence: 76%

Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors

et al. 2012

View full text Add to dashboard Cite

“…Not unlike OTFTs with thermally evaporated organic semiconductors, the mobility of our OTFTs increases with increasing grain size. This trend is well-described by a simple composite model proposed by Farmakis [26] and Horowitz [27] over the entire range of grain sizes explored. This method of seeding the crystallization of solutionprocessed organic semiconductors effectively eliminates grain size variation in the active layers of OTFTs, thus providing a robust route to fabricating reliable and reproducible devices.…”

mentioning

confidence: 89%

Controlling Nucleation and Crystallization in Solution‐Processed Organic Semiconductors for Thin‐Film Transistors

et al. 2009

View full text Add to dashboard Cite

Three orders of magnitude is the range over which the grain size (see figure) can be tuned in solution‐processed organic semiconductor thin films for TFTs. Fluorinated triethylsilyl anthradithiophene (FTES‐ADT) is added in fractional amounts to seed crystallization of TES‐ADT. Correlation between device mobility and grain size in the active layer is described by a composite mobility model that assumes charge‐carrier traps are located at grain boundaries.

show abstract

“…In the conducting channel, we replace the donor density N by C i V G /d m . The barrier is then given by [32] …”

Section: Barrier Height At Grain Boundariesmentioning

confidence: 99%

“…The equivalent circuit of this structure is straightforward: It simply consists of grains of average length L G and mobility l G connected in series with grain boundaries of average length L GB and mobility l GB . The channel mobility l is then given by [32] …”

Section: Charge Transport At High Temperaturementioning

confidence: 99%

Tunneling Current in Polycrystalline Organic Thin‐Film Transistors

Horowitz¹

2003

Adv Funct Materials

138

109

View full text Add to dashboard Cite

Several recent papers have demonstrated that charge‐carrier mobility in organic field‐effect transistors made of vacuum‐evaporated films may become temperature‐independent at low temperature. To account for this behavior, we developed a model based on the polycrystalline nature of these films, where charge transport is mostly limited by grain boundaries. The free‐carrier density in the intergrain regions is controlled by traps, which leads to the formation of back‐to‐back Schottky barriers at each side of the grain boundaries. The height and width of these barriers is estimated from solving Poisson’s equation using the graded‐channel approximation. It is shown that in most cases the barrier width is negligibly small as compared to the physical size of the grain boundaries. In the high‐temperature regime, the conducting channel can be simply described by grains and grain boundaries connected in series, so that the overall resistance reduces to that of the grain boundaries. At low temperatures, tunneling through the barrier becomes predominant, leading to temperature‐independent mobility. A complete two‐dimensional model for charge tunneling through the barriers is developed. A quantitative check of the model is made by least‐squares fitting of the gate voltage‐dependent current measured on an octithiophene transistor at low temperature, which gives a reasonable determination of the trap density and size of the grain boundaries.

show abstract

On-current modeling of large-grain polycrystalline silicon thin-film transistors

Cited by 83 publications

References 13 publications

Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors

Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors

Controlling Nucleation and Crystallization in Solution‐Processed Organic Semiconductors for Thin‐Film Transistors

Tunneling Current in Polycrystalline Organic Thin‐Film Transistors

Contact Info

Product

Resources

About