On-chip Y-junction with adaptive power splitting toward ultrabroad bandwidth

Abstract

Growing research interests have been directed to the emerging optical communication band at 2-µm wavelengths. The silicon photonic components are highly desired to operate over a broad bandwidth covering both C-band and the emerging 2-µm wave band. However, the dispersions of the silicon waveguides eventually limit the optical bandwidth of the silicon photonic devices. Here, we introduce a topology-optimized Y-junction with a shallow-etched trench and its utility to reverse the detrimental dispersion effect. The shallow trench enables the Y-junction to have an adaptive splitting capability over a broad spectral range. The 0.2-dB bandwidth of the power splitter exceeds 800 nm from 1400 nm to 2200 nm. The device has a compact footprint of 3 µm × 1.64 µm. The device is characterized at the C-band and 2-µm band with a measured excess loss below 0.4 dB for a proof-of-concept demonstration.

Resonant‐Cavity‐Enhanced Electrochromic Materials and Devices

“…However, most reviews have emphasized the key role of advanced plasmonic and dielectric materials, as well as basic chromogenic structures in static and dynamic structural color generation. [ 27,51–57 ] Although electrochromic materials are mentioned, there is a no comprehensive review of the use of optical resonator enhancement in multicolored electrochromic materials and devices. In addition, the basic physical theory and mechanism of various optical resonators for electrochromic applications are seldom covered.…”