On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities

Abstract

We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.

Light based underwater wireless communications

“…Smart lighting and display, free-space and underwater optical communications, optical switching, clocking, and interconnect 32,62,84,85) are expected to benefit from the development.…”

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

“…Towards such integration, GaN-based core-shell nanowire LEDs and PDs were placed and patterned to demonstrate optical coupling with SiN waveguides [11]. Besides, researchers fabricated the LED, PD and the suspended waveguide on the same GaN-onsilicon substrate [12] and such scheme enabled 30Mbps in-plane data communication link [13]. Compared to those based on LEDs, the photonics integration based on LDs are promising owing to its significant higher modulation bandwidth [14,15].…”

Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication

“…In our previous work, the modulated light from the emitter was guided by suspended waveguides and transported to the detector. An isolation 3 trench located in the waveguide was used to separate the two p-GaN regions in the in-plane VLC system, leading to an abrupt change in the light propagation along the waveguides [18][19][20]. Here, we report the realization of an in-plane VLC system consisting of two InGaN/GaN MQWDs and suspended waveguides on a single chip, fabricated on a 2-inch GaN-on-silicon platform using a wafer-level technique.…”