On Chaos and Complexity Analysis for a New Sine-Based Memristor Map with Commensurate and Incommensurate Fractional Orders

Abstract

In this study, we expand a 2D sine map via adding the discrete memristor to introduce a new 3D fractional-order sine-based memristor map. Under commensurate and incommensurate orders, we conduct an extensive exploration and analysis of its nonlinear dynamic behaviors, employing diverse numerical techniques, such as analyzing Lyapunov exponents, visualizing phase portraits, and plotting bifurcation diagrams. The results emphasize the sine-based memristor map’s sensitivity to fractional-order parameters, resulting in the emergence of distinct and diverse dynamic patterns. In addition, we employ the sample entropy (SampEn) method and C0 complexity to quantitatively measure complexity, and we also utilize the 0–1 test to validate the presence of chaos in the proposed fractional-order sine-based memristor map. Finally, MATLAB simulations are be executed to confirm the results provided.

Applying exponential unit for breaking symmetry of memristive maps

“…Additionally, there is ongoing research into utilizing memristors for unconventional applications, such as cognitive computing and brain-inspired architectures, which hold great promise for the future [10][11][12][13]. As memristor technology continues to advance, it is poised to redefine the landscape of memory and computing, offering remarkable advantages that could revolutionize various industries and lead to the development of more efficient and intelligent electronic systems [14][15][16][17]. It is noted that there are some progress regarding the discrete memristor.…”