On an Ammonia Gas Sensor Based on a Pt/AlGaN Heterostructure Field-Effect Transistor

Chen, Tai-You; Chen, Huey-Ing; Hsu, Chia-Wen; Huang, Chien-Chang; Chang, Che-Wei; Chou, Po-Cheng; Liu, Wen‐Chau

doi:10.1109/led.2012.2184832

Cited by 48 publications

(33 citation statements)

References 15 publications

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“…I N RECENT years, ammonia has been widely used in the field of chemical industries, agricultures and medical applications [1], [2]. Ammonia is a compound of nitrogen and hydrogen, and it shows characteristics of colorless, pungent smell, and explosive property at a high-concentration ammonia atmosphere [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

et al. 2015

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An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH 3 /air gas at 250°C and 350°C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH 3 /air) at 250°C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.

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Section: Introductionmentioning

confidence: 99%

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

et al. 2015

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“…[44][45][46][47] Figure 2 shows the Schottky diode I-V characteristics of the Pt-gated AlGaN/GaN HEMT sensor exposed to pure nitrogen and 1% CH 4 at 400 C and the corresponding sensitivity.…”

Section: Resultsmentioning

confidence: 99%

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Liu

Ren

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

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“…A c c e p t e d M a n u s c r i p t 13 Above 573K, the adsorbed gaseous quantities would decrease with temperature. On the other hand, with shrinking the electrode spacing d, an obvious increase in ammonia sensor response S is found.…”

Section: Page 13 Of 39mentioning

confidence: 99%

“…In past few decades, semiconductor-type sensors for detecting gaseous species have been widely produced and reported [6][7][8][9][10][11][12][13][14][15]. Different material systems and device structures, such as resistor [10], Schottky diode [11], field-effect transistor (FET) [12][13], optical-fiber [14], acoustic wave [15], and YSZ [16] have been reported to fabricate prominent ammonia gas sensors.…”

Section: Introductionmentioning

confidence: 99%

“…Different material systems and device structures, such as resistor [10], Schottky diode [11], field-effect transistor (FET) [12][13], optical-fiber [14], acoustic wave [15], and YSZ [16] have been reported to fabricate prominent ammonia gas sensors. In addition, oxide-semiconductor material systems, such as ZnO, ITO, WO 3 , and et al [10,[17][18], were used as resistor-type devices for ammonia gas sensing.…”

Section: Introductionmentioning

confidence: 99%

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