On a site-selective exafs experiment using optical emission

Goulon, J.; Tola, Pascal; Lemonnier, M.; Dexpert‐Ghys, Jeannette

doi:10.1016/0301-0104(83)85121-0

Cited by 45 publications

(19 citation statements)

References 24 publications

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“…More complex secondary deexcitation channels are also possible in specific materials after x-ray-induced photoionization, yielding to x-ray-beam-induced luminescence and current phenomena (Bianconi, Jackson, and Monahan, 1978;Goulon et al, 1983;Emura et al, 1993;Vyvenko et al, 2002).…”

Section: Parametermentioning

confidence: 99%

Materials characterization by synchrotron x-ray microprobes and nanoprobes

et al. 2018

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Section: Parametermentioning

confidence: 99%

Materials characterization by synchrotron x-ray microprobes and nanoprobes

et al. 2018

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“…[13][14][15][16][17] For instance, x-ray-excited optical luminescence ͑XEOL͒ successfully offers site-specific XAFS spectra of optically active centers with its x-ray photon energy dependence ͑XEOL-XAFS͒. 18,19 This technique selectively evaluates the keV photon absorption of the optical centers by the meV optical emission.…”

Section: Introductionmentioning

confidence: 99%

Site-specific x-ray absorption spectroscopy of electron traps by x-ray-induced displacement current measurement

Ishii

2002

Phys. Rev. B

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The concept of ''x-ray-induced displacement currents'' is introduced for x-ray absorption spectroscopy ͑XAS͒ in the local structure analysis of electron traps. Since such a displacement current ͑orthogonal to the conduction current, i.e., the conventional photocurrent͒ is responsive to localized electrons, it allows XAS to provide site-specific x-ray absorption of electron traps. Capacitance x-ray absorption fine structure ͑Capacitance XAFS͒ measurement based on this idea is adopted for defect observation in a compound semiconductor, and the result is a nonlinear dependence of the XAFS signal intensity on the bias voltage applied to the sample. This nonlinearity is formulated by the theory of the Schottky barrier diode, which is used for the capacitor formation; the x-ray-induced photoionization of the defect reduces the trapping charge at interface between depletion layer and semiconductor, resulting in capacitance increase. The temperature dependence of capacitance XAFS spectra indicates that the conduction current has no site specificity owing to the mixing of the photocarrier from the defect and crystal sites, while the x-ray-induced displacement current provides sitespecific spectra independent of the conduction current.

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“…X-ray-excited optical luminescence (XEOL) has been studied (Goulon et al, 1983;Sham et al, 1993) in order to acquire site-selectivity in x-ray absorption fine structure (XAFS) measurement. Since the luminescence wavelength is intrinsic to the materials, an x-ray photon energy dependence of the monochromatized XEOL yield indicates a site-selective XAFS spectrum (XEOL-XAFS).…”

Section: Introductionmentioning

confidence: 99%

X-ray-excited optical luminescence of impurity atom in semiconductor

Ishii

Tanaka²,

Komuro³

et al. 2001

J Synchrotron Radiat

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We observed the x-ray-excited optical luminescence (XEOL) of erbium-doped silicon (Si:Er) thin films to make a site-selective x-ray absorption fine structure (XAFS) measurement of an optically active Er atom. The undulator beam was used for the increment of the electron population in the excited state, and following XEOL at an infrared wavelength of 1.54 µm with minimum absorption loss in the host Si was detected. The edge-jump and XAFS oscillation were successfully obtained at the Er L III -edge. This spectrum originated from inner-shell excitation and relaxation of only the optically active Er atom, indicating that site-selectivity at an atomic level was achieved.

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On a site-selective exafs experiment using optical emission

Cited by 45 publications

References 24 publications

Materials characterization by synchrotron x-ray microprobes and nanoprobes

Materials characterization by synchrotron x-ray microprobes and nanoprobes

Site-specific x-ray absorption spectroscopy of electron traps by x-ray-induced displacement current measurement

X-ray-excited optical luminescence of impurity atom in semiconductor

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