On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects

Bondarenko, V. B.; Filimonov, A. V.

doi:10.1134/s1063782615090080

Cited by 1 publication

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lowfrequency admittance and the phase shift angle between the sinusoidal current and voltage in the capacitor with the working substance "insulator-partially disordered silicon-insulator" were calculated in [5]. The frequency dependence of the admittance and the nonlinear capacitance on the voltage of the "semiconductor-insulator-metal-insulator-semiconductor" structure, which simulates semiconductor materials with metallic nanosized inclusions, was also theoretically studied [6]. However, the temperature dependences of the admittance and capacitance of such a structure were not calculated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-Frequency Capacitor with Working Substance "Insulator-Undoped Silicon-Insulator"

Poklonski

Anikeev

Вырко

2022

Prib. metody izmer.

View full text Add to dashboard Cite

The study of the parameters of capacitors with various working substances is of interest for the design and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits.The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working substance "insulator-undoped silicon-insulator" at different applied to the capacitor direct current (DC) voltages, measuring signal frequencies and temperatures.A model of such the capacitor is proposed, in which 30 µm thick layer of undoped (intrinsic) crystalline silicon (i-Si) is separated from each of the capacitor electrodes by 1 µm thick insulator layer (silicon dioxide).The dependences of the capacitor capacitance on the DC electrical voltage U on metal electrodes at zero frequency and at the measuring signal frequency of 1 MHz at absolute temperatures T = 300 and 400 K are calculated. It is shown that the real part of the capacitor capacitance increases monotonically, while the imaginary part is negative and non-monotonically depends on U at the temperature T = 300 K. An increase in the real part of the capacitor capacitance up to the geometric capacitance of oxide layers with increasing temperature is due to a decrease in the electrical resistance of i-Si layer. As a result, with an increase in temperature up to 400 K, the real and imaginary parts of the capacitance take constant values independent of U. The capacitance of i-Si layer with an increase in both temperature T and voltage U is shunted by the electrical conductivity of this layer. The phase shift is determined for a sinusoidal electrical signal with a frequency of 0.3, 1, 10, 30, 100, and 300 MHz applied to the capacitor at temperatures 300 and 400 K.

show abstract

Section: Introductionmentioning

confidence: 99%

“…Figure5 -Dependence of measuring signal phase shift angle θ at frequency ω/2π on stationary voltage U at the capacitor electrodes, calculated by Eq. (3) for L s = 30 µm and L ox = 1 µm at T = 300 K (blue lines); ω/2π (MHz) = = 0.3 (curve 1), 1 (2), 10 (3), 30 (4), 100 (5), 300(6) and at temperature T = 400 K (red line 2' for ω/2π = 1 MHz)…”

mentioning

confidence: 99%