Ohmic contacts to n-type and p-type GaSb

Subekti, Agus; Chin, V.W.L.; Tansley, T.L.

doi:10.1016/0038-1101(95)00144-1

Cited by 17 publications

(9 citation statements)

References 15 publications

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“…22 I-V sweeps showed that Ohmic contacts were established. To prevent the film from becoming shorted accidentally, the GaSb thin film is etched away around the edges of the sample by Cl 2 / Ar 2 based reactive ion etching ͑Ref.…”

Section: Comparison To Experimentsmentioning

confidence: 98%

Thermoelectric transport in the coupled valence-band model

Ramu¹,

Cassels²,

Hackman³

et al. 2011

Journal of Applied Physics

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The Boltzmann transport equation ͑BTE͒ is applied to the problem of thermoelectric transport in p-type semiconductors whose valence band-structure is describable in terms of two bands degenerate at the ⌫ point. The Seebeck coefficient and mobility are calculated from the solution to two coupled BTEs, one for each band, with interband scattering and scattering by inelastic mechanisms treated exactly by the application of an algorithm developed by the authors in an earlier work. Most treatments of this problem decouple the two bands by neglecting certain terms in the BTE, greatly simplifying the mathematics: the error in the Seebeck coefficient and mobility introduced by this approximation is quantified by comparing with the exact solution. Degenerate statistics has been assumed throughout, and the resulting formalism is therefore valid at high hole concentrations. Material parameters are used that have been deduced from optical, strain and other experiments often not directly related to hole transport. The formulations in this work thus do not use adjustable or fitting parameters. The transport coefficients of heavily doped gallium antimonide, a typical high-efficiency p-type thermoelectric material, are calculated and agreement to experimentally determined values is found to be satisfactory.

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Section: Comparison To Experimentsmentioning

confidence: 98%

Thermoelectric transport in the coupled valence-band model

Ramu¹,

Cassels²,

Hackman³

et al. 2011

Journal of Applied Physics

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“…The electrical properties of ohmic contacts are defined by specific transfer resistance and specific contact resistance. Specific contact resistances should be smaller than 10 -4 Ω-cm -2 to be considered as ohmic, but, values in the 10 -6 to 10 -7 range are preferable [16][17][18][19] .…”

Section: Introductionmentioning

confidence: 99%

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

et al. 2013

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Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ~ 1e17 cm -3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm 2 have been observed.

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“…Because, at the surface of this material, the Fermi level is pinned near the conduction band [19] and it can be highly doped up to 1 Â 10 20 cm 23 by using Te as a dopant [17]. In fact, high doping is necessary for the ohmic contacts in order to make the depletion region at the metal -semiconductor interface thin enough to enable carrier tunnelling [20]. This is displayed in Fig.…”

Section: Introductionmentioning

confidence: 99%

Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

Arafin

Bachmann

Kashani-Shirazi

et al. 2009

IET Optoelectronics

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The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6 Â 10 26 V cm 2 without any annealing are obtained. The resistivity decreases to 3.7 Â 10 26 V cm 2 after annealing at 3508C for 90 s.

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Ohmic contacts to n-type and p-type GaSb

Cited by 17 publications

References 15 publications

Thermoelectric transport in the coupled valence-band model

Thermoelectric transport in the coupled valence-band model

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

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