Ohmic Contacts to II–VI and III–V Compound Semiconductors

Kim, Tae-Jie; Holloway, Paul H.

doi:10.1016/b978-081551439-8.50005-5

Cited by 3 publications

(3 citation statements)

References 209 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This different behavior is likely linked to the absence of Ge in the metal electrodes. Germanium is known to lead to Ni segregation through the formation of NiGe alloys . Energy dispersive X-ray spectrometry (EDS) was used to identify the composition of the NW sections.…”

mentioning

confidence: 99%

See 1 more Smart Citation

GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters

et al. 2016

View full text Add to dashboard Cite

We investigate light emission from nanoscale point-sources obtained in hybrid metal-GaAs nanowires embedding two sharp axial Schottky barriers. Devices are obtained via the formation of Ni-rich metallic alloy regions in the nanostructure body thanks to a technique of controlled thermal annealing of Ni/Au electrodes. In agreement with recent findings, visible-light electroluminescence can be observed upon suitable voltage biasing of the junctions. We investigate the time-resolved emission properties of our devices and demonstrate an electrical modulation of light generation up to 1 GHz. We explore different drive configurations and discuss the intrinsic bottlenecks of the present device architecture. Our results demonstrate a novel technique for the realization of fast subwavelength light sources with possible applications in sensing and microscopy beyond the diffraction limit.

show abstract

mentioning

confidence: 99%

“…Germanium is known to lead to Ni segregation through the formation of NiGe alloys. 32 Energy dispersive X-ray spectrometry (EDS) was used to identify the composition of the NW sections. A low-energy (5 kV) primary electron beam was employed with the aim to maximize the contrast of the transformed NW sections and to minimize the SiO 2 /Si substrate signal.…”

mentioning

confidence: 99%

GHz Electroluminescence Modulation in Nanoscale Subwavelength Emitters

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Rapid thermal annealing is a powerful tool for the preparation of ohmic contact at metal-semiconductor interfaces, and it can yield to complex inter-diffusion phenomena, as it has been extensively studied in the case of bulk GaAs [1] . We observed that the controlled thermal annealing of GaAs nanowire (NW) devices with Ni/Au electrodes promotes the diffusion of nickel into the nanowire, forming Ni-rich metallic alloy regions in the nanostructured body.…”

mentioning

confidence: 99%