2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS) 2019
DOI: 10.1109/peds44367.2019.8998898
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Ohmic contacts study of P+N diodes on (111) and (100) diamond

Abstract: Pseudo-vertical P + N diamond diodes are fabricated. We focused on the determination of specific contact resistance of Tibased contacts for (111) and (100) p-type diamond layers doped around 10 19 at/cm 3 using circular Transfer Length Method (cTLM). Ohmic behavior is obtained and the variation of the specific contact resistance is discussed. I.

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