Ohmic Contact Formation in Semi‐Insulating GaAs Using Shallow Heavily Doped p‐Type Layers

Bose, Arup; Henderson, H. Thurman

doi:10.1149/1.2100889

J. Electrochem. Soc.

1987

DOI: 10.1149/1.2100889

|View full text |Cite

Ohmic Contact Formation in Semi‐Insulating GaAs Using Shallow Heavily Doped p‐Type Layers

Arup Bose

H. Thurman Henderson

Abstract: not Available.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1989

1991

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Conventional p-type alloyed contacts have been reported using Au/Zn (3), Au/Zn/Au (4-5), Au/Mn (6), and Au/Mg (7), with a minimum value of the specific contact resistivity, pc, of 2 • 10 .7 fi-cm 2 being reported for Au/Mn. Zinc diffusion from a spin-on Zn source prior to Au/Zn metallization has not yielded better results (8). All of these alloyed systems however suffer from difficulties which include composition control, stability, rough contact morphology, bad edge definition, and nonuniform current injection.…”

mentioning

confidence: 99%

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

Bulman¹,

Gwilliam²,

Chambers³

1989

J. Electrochem. Soc.

View full text Add to dashboard Cite

Ti/Pt/Au ohmic contacts to p-type GaAs/AI=Gal_xAs heterostructures have been studied as a function of surface dopant concentrations between 6 • 10 TM cm -3 and 8.5 • 10 TM cm -3. The specific contact resistivities as determined from contact resistance measurements employing the transmission line method (TLM) on as-grown molecular beam epitaxially grown structures were at or above 1 • 10 .8 ~-cm 2. Three different conventional TLM metallization patterns were employed in the measurements as well as circular geometry TLM patterns. Open-tube Zn diffusion was employed to increase the surface dopant concentration to 8.5 • 10 TM cm ~ and produced specific contact resistivities as low as 2.5 • 10 .7 ~-cm 2. These values are found to be unchanged after 8000h and remain unaffected by 400~ 2 rain duration anneals.

show abstract

mentioning

confidence: 99%

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

Bulman¹,

Gwilliam²,

Chambers³

1989

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Rapid Thermal Diffusion of Zinc in GaAs

Nowak

Kühn

Morgenstern

et al. 1991

Cryst. Res. Technol.

View full text Add to dashboard Cite

Rapid thermal diffusion of zinc into semi-insulating GaAs from spin-on silica films was investigated for various temperatures and heating ratcs with halogen lamps as the heat source. Dependent on the heating rate two types of SIMS profiles were observcd. The degree of electrical activation of zinc was different as measured by the Hall effect. In some cases at high zinc concentrations, a ZnGa,O, film on the GaAs surface was formed.Es wird uber Experimente von Zink-Diffusion in halbisolierendes GaAs aus spin-on Schichten mit einem Halogenlampenofen berichtet. Diffusionstemperatur und Aulheizgeschwindigkeit wurden variiert. Es resultieren zwei Arten von SIMS-Profilen, die einen unterschiedlichen Grad der Zink-Aktivierung verkorpern. Bei einigen Proben wurde auf der Oberfllche die Bildung von ZnGa,O, beobachtet.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Ohmic Contact Formation in Semi‐Insulating GaAs Using Shallow Heavily Doped p‐Type Layers

Abstract: not Available.

Cited by 2 publications

References 14 publications

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

Rapid Thermal Diffusion of Zinc in GaAs

Contact Info

Product

Resources

About