Off-state instabilities in thermally nitrided-oxide n-MOSFETs

Ma, Z.J.; Lai, P.T.; Cheng, Yuan‐Chung

doi:10.1109/16.249434

Cited by 20 publications

(5 citation statements)

References 20 publications

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“…Lateral field enhanced hot hole injection is unlikely to happen and the observed transient should be attributed to oxide electron emission. This result is different from the conclusion by Cheng et al, at a large [10] that the GIDL current transient is mainly caused by hot hole injection. It should be noted that the measured transient sustains for tens of seconds.…”

Section: Modeling Of Gidl Transientcontrasting

confidence: 99%

“…Apparently, both the electron detrapping and hole detrapping induced GIDL transients follow a straight line. This characteristic agrees with the model prediction (10) and confirms that oxide charge detrapping is through fieldenhanced tunneling. In addition, we noticed that the hole detrapping transient exhibits a larger slope in Fig.…”

Section: B Time and Field Dependences Of Gidl Transientsupporting

confidence: 90%

“…current [9], and GIDL current [10] at a DC bias. In the past, physics and characteristics of oxide charge trapping/detrapping mechanisms have been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique

Wang

Chang

Chiang

et al. 1998

IEEE Trans. Electron Devices

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We proposed a new measurement technique to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient. This measurement technique is based on the concept that in a MOSFET the Si surface field and thus GIDL current vary with oxide trapped charge. By monitoring the temporal evolution of GIDL current, the oxide charge trapping/detrapping characteristics can be obtained. An analytical model accounting for the time-dependence of an oxide charge detrapping induced GIDL current transient was derived. A specially designed measurement consisting of oxide trap creation, oxide trap filling with electrons or holes and oxide charge detrapping was performed. Two hot carrier stress methods, channel hot electron injection and bandto-band tunneling induced hot hole injection, were employed in this work. Both electron detrapping and hole detrapping induced GIDL current transients were observed in the same device. The time-dependence of the transients indicates that oxide charge detrapping is mainly achieved via field enhanced tunneling. In addition, we used this technique to characterize oxide trap growth in the two hot carrier stress conditions. The result reveals that the hot hole stress is about 10 4 times more efficient in trap generation than the hot electron stress in terms of injected charge.

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Section: Modeling Of Gidl Transientcontrasting

confidence: 99%

Section: B Time and Field Dependences Of Gidl Transientsupporting

confidence: 90%

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Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique

Wang

Chang

Chiang

et al. 1998

IEEE Trans. Electron Devices

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“…So far, these problems have been studied by measuring time-dependent leakage currents to the gate, the drain ͑source͒, or the substrate in a MOSFET structure. [1][2][3][4][5] However, these macroscopic methods show the averaged properties over the area under the gate electrode without knowing the exact spatial distribution of the trapped charge. Since the advent of the scanning tunneling microscope ͑STM͒, 6 various types of scanning probe microscopes have been developed.…”

mentioning

confidence: 99%

Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy

Kang

Buh

Lee

et al. 1999

Applied Physics Letters

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“…It is clear that a higher BF 2 implantation dose (dose: device D > C > B > A) results in a higher off-state V BD . Under our off-state V BD measurement conditions, there are two possible mechanisms leading to off-state breakdown, namely, gate-induced drain leakage (GIDL) [21][22][23][24][25][26] and sub-strate=drain junction breakdown. To identify the off-state breakdown mechanism in this device, the V j of the substrate= drain junction is further measured.…”

Section: Resultsmentioning

confidence: 99%

Drift region doping effects on characteristics and reliability of high-voltage n-type metal–oxide–semiconductor transistors

Chen

Chang

Liu

et al. 2015

Jpn. J. Appl. Phys.

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In this study, off-state breakdown voltage (V BD) and hot-carrier-induced degradation in high-voltage n-type metal–oxide–semiconductor transistors with various BF2 implantation doses in the n− drift region are investigated. Results show that a higher BF2 implantation dose results in a higher V BD but leads to a greater hot-carrier-induced device degradation. Experimental data and technology computer-aided design simulations suggest that the higher V BD is due to the suppression of gate-induced drain current. On the other hand, the greater hot-carrier-induced device degradation can be explained by a lower net donor concentration and a different current-flow path, which is closer to the Si–SiO2 interface.

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Off-state instabilities in thermally nitrided-oxide n-MOSFETs

Cited by 20 publications

References 20 publications

Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique

Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique

Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy

Drift region doping effects on characteristics and reliability of high-voltage n-type metal–oxide–semiconductor transistors

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