ODMR of single point defects in silicon nanostructures

Abstract

We present the findings of the optically detected magnetic resonance technique (ODMR), which reveal single point defects in the ultra‐narrow silicon quantum wells (Si‐QW) confined by the superconductor δ‐barriers. This technique allows the ODMR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the transmission spectra within the frameworks of the excitonic normal‐mode coupling caused by the microcavities embedded in the Si‐QW plane. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)