Octamethylcyclotetrasiloxane-Based, Low-Permittivity Organosilicate Coatings

Lin, Yaojian; Tsui, Ting Y.; Vlassak, Joost J.

doi:10.1149/1.2202120

Cited by 49 publications

(56 citation statements)

References 46 publications

(75 reference statements)

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“…Figure 3(b) provides a survey of the bonds that occur in the OSG coatings as a function of film porosity. The bond densities in the figure were calculated from the FTIR absorption spectra of the coatings using inverse infrared cross-sections as discussed in Reference [17] and represent bond densities for the OSG matrix, rather than averages over the entire film volume. The densities of both the siloxane bonds and the organic component in the matrix of the porous films increase with increasing porogen.…”

Section: Resultsmentioning

confidence: 99%

“…The absorption spectrum provides information on the functional groups that are present in the films. The infrared absorption inverse cross-sections of the various functional groups reported in reference [17,18] were used to calculate the network bond densities of Si-C and Si-O bonds in the OSG films.…”

Section: Methodsmentioning

confidence: 99%

“…(b) Survey of the bond densities in porous OSG films with different levels of porosity, calculated from the FTIR spectra using the inverse infrared cross sections from reference [17]. Plane-strain modulus of a series of dense OSG films as a function of WNBD; data taken from [13].…”

Section: Porositymentioning

confidence: 99%

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The effect of porogen loading on the stiffness and fracture energy of brittle organosilicates

Lin

Tsui

et al. 2009

J. Mater. Res.

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Integrating porous low-permittivity dielectrics into Cu metallization is one of the strategies to reduce power consumption, signal propagation delays, and crosstalk between interconnects for the next generation of integrated circuits. The porosity and pore structure of these low-k dielectric materials, however, also affect other important material properties in addition to the dielectric constant. In this paper, we investigate the impact of porogen loading on the stiffness and cohesive fracture energy of a series of porous organosilicate glass (OSG) thin films using nanoindentation and the doublecantilever beam (DCB) technique. The OSG films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and had a porosity in the range of 7~45%. We show that the degree of porogen loading during the deposition process changes both the network structure and the porosity of the dielectric, and we resolve the contributions of both effects to the stiffness and fracture energy of the films. The experimental results for stiffness are compared with micromechanical models and finite element calculations.-2 -It is demonstrated that the stiffness of the OSG films depends sensitively on their porosity and that considerable improvements in stiffness may be obtained through further optimization of the pore microstructure. The cohesive fracture energy of the films decreases linearly with increasing porosity, consistent with a simple planar through-pore fracture mechanism.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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The effect of porogen loading on the stiffness and fracture energy of brittle organosilicates

Lin

Tsui

et al. 2009

J. Mater. Res.

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“…[3][4][5] The relative dielectric constant (k value) of dense OSG is limited to values greater than about 2.7. [6][7][8] It is expected that materials with even lower dielectric constants are needed for future generations of integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

Tsui

Vlassak

2009

Journal of Applied Physics

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The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters. Abstract -Among various low-dielectric constant ('low-k') materials under development, organosilicate glasses (OSG) containing nanometer-size pores are leading candidates for use as intra-metal dielectrics in future microelectronics technologies. In this paper, we investigate the direct impact of water diffusion on the fracture behavior of film stacks that contain porous OSG coatings. We demonstrate that exposure of the film stacks to water causes significant degradation of the interfacial adhesion energy, but that it has negligible effect on the cohesive fracture energy of the nanoporous OSG layer. Isotope tracer diffusion experiments combined with dynamic secondary ion mass spectroscopy (SIMS) show that water diffuses predominantly along the interfaces, and not through the porous films. This unexpected result is attributed to the hydrophilic character of the interfaces.

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“…, and Si-OSi suboxide (1021cm -1 ) bonds were reduced [19][20][21][22]. Moreover, the dielectric constant at 1 MHz increased from 2.50 to 3.26.…”

Section: Damages Induced By O 2 Plasmamentioning

confidence: 99%

Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films

Huang¹,

Bao

Liu

et al. 2008

MRS Proc.

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Methyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was developed for dielectric recovery of plasma damaged OSG low-k dielectrics. The methyl or phenyl containing silylation agents were used to convert the hydrophilic -OH groups to hydrophobic groups. Compared with Trimethylchlorosilane (TMCS) and Phenyltrimethoxysilane (PTMOS), Dimethyldichlorosilane (DMDCS) was found to be more effective in recovering surface carbon concentration and surface hydrophobicity. But the carbon recovery effect was limited to the surface region.Alternatively, UV radiation with thermal activation was applied for dielectric recovery of plasma damaged OSG low-k dielectrics. The combined UV/thermal process was found to be efficient in reducing -OH, physisorbed water, and C=O bonds. The dielectric constant was recovered within 5% of the pristine sample and the leakage current was also much reduced. Aging test in air showed that no moisture retake was observed, indicating the repaired film was stable.

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Octamethylcyclotetrasiloxane-Based, Low-Permittivity Organosilicate Coatings

Cited by 49 publications

References 46 publications

The effect of porogen loading on the stiffness and fracture energy of brittle organosilicates

The effect of porogen loading on the stiffness and fracture energy of brittle organosilicates

Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films

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