Occupation probability for acceptor in Al-implanted <i>p</i>-type 4H–SiC

Matsuura, Hideharu; Sugiyama, Koichi; Nishikawa, Kazuhiro; Nagata, Takashi; Fukunaga, N.

doi:10.1063/1.1589176

Cited by 22 publications

(30 citation statements)

References 20 publications

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“…Figure 2 shows the temperature dependence of the hole mobility (µ h (T )). Because at the same temperature µ h (T ) in the Mg-implanted 4H-SiC layer was only a little bit lower than the value of µ h (T ) in the Al-implanted 4H-SiC layer [3], the holes moved in the valence band, not by hopping. As a result, it is found that Mg atoms in 4H-SiC emit holes into the valence band and behave as an acceptor.…”

Section: Resultsmentioning

confidence: 99%

Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

Matsuura

Morine

Nagamachi³

2014

Acta Phys. Pol. A

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Because Al and B (elements of group III) in SiC are acceptors with deep energy levels and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (an element of group II) that may emit two holes into the valence band is investigated. Annealing at 1800• C makes a Mg-implanted layer p-type. It is found that an Mg acceptor level in 4H-SiC is too deep to reliably determine the density and energy level of the Mg acceptor using the frequently used occupation probability, i.e., the FermiDirac distribution function. Using the distribution function that accounts for the inuence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be determined to be approximately 1 × 10 19 cm −3 and 0.6 eV, respectively. These values are considered to be reliable because they agree well with the Mg implantation condition.

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Section: Resultsmentioning

confidence: 99%

Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

Matsuura

Morine

Nagamachi³

2014

Acta Phys. Pol. A

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“…10,11 In order to determine a reliable value for N A using p(T) in p-type SiC, the following two attempts have been made: ͑1͒ the experimental adjustment of Hall-scattering factor for holes 12,13 and ͑2͒ the theoretical introduction of a distribution function suitable for Al acceptors. 8,9,14,15 Moreover, Al atoms with high density may disturb the valence band structure near E V , and might form an impurity band. However, the p(T) for these p-type SiC samples exhibit a typical semiconductor behavior.…”

Section: Introductionmentioning

confidence: 99%

Investigation of a distribution function suitable for acceptors in SiC

Matsuura

2004

Journal of Applied Physics

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The distribution function suitable for an acceptor in p-type SiC is investigated using lightly or heavily Al-doped SiC samples. From the temperature dependence of the hole concentration, the density and energy level of the acceptors are estimated using two different distribution functions. The proposed distribution function, which considers the influence of the excited states of acceptors, can be applied to both the samples, while the Fermi–Dirac distribution function, which does not include this influence, can be applied only to the lightly doped sample. In order to elucidate this result theoretically, the dependencies of both distribution functions on the temperature or the acceptor density are simulated. From these simulations, the proposed distribution function is found to be appropriate for determining the density and energy level of dopants with a deep dopant energy level for any dopant density.

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“…The physical properties of n-type SiC have extensively been investigated so far, [15][16][17][18][19] and those of p-type SiC have also been obtained recently. [20][21][22][23][24][25][26] In our studies, the temperature dependences of hole mobility, hole concentration, and Hall scattering factor were shown by performing Hall-effect measurement on thick p-type SiC epilayers with various doping concentrations. 24,26) Although the resistivity of p-type SiC can be estimated from these data, 24,26) it is much more useful to give an analytical expression that describes the temperature dependence of resistivity.…”

confidence: 99%

Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

Asada

Suda

Kimoto

2018

Jpn. J. Appl. Phys.

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Temperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5.8 × 1014–7.1 × 1018 cm−3) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations.

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Occupation probability for acceptor in Al-implanted p-type 4H–SiC

Cited by 22 publications

References 20 publications

Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

Investigation of a distribution function suitable for acceptors in SiC

Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

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