Obvious phase transition status induced by He+-ions implantation in KTN crystal

Domain Engineering Enabled Giant Linear Electro‐Optic Effect and High Transparency in Ferroelectric KTa1−xNbxO3 Single Crystals

“…[28] As we normalize the Raman spectra of SAMP1 FEÀDE and SAMP1 FEÀCC (depicted in Figure 3d,e), we could see a peak shift of 5 cm À1 in the second-order peak at 137 cm À1 and the firstorder peak at 207 cm À1 in SAMP1 FEÀDE (Figure 3d) toward a higher frequency due to their sensitivity to the lattice symmetry and uniformity of the crystal, but no shift in the overtone mode at 835 cm À1 (Figure 3e). [25] We also observe no shift in the emission line peak at 7 cm À1 (Figure 3c). [27] This indicates that this is a real shift and not an artifact of the spectrometer calibration.…”

“…The Raman shift peaks at 137, 207, and 557 cm −1 of and indicate that the states of and are ferroelectric. [ 16,21–26 ] The intensity of the peaks of was larger than (as shown in Figure 3a), and the full width half maximum (FWHM) of the peak at 557 cm −1 of was smaller than that of (as shown in Figure 3b). It should be noted that the FWHM variation at 557 cm −1 represents the relative FWHM variation of the peaks at 554 and 578 cm −1 .…”

“…It should be noted that the FWHM variation at 557 cm −1 represents the relative FWHM variation of the peaks at 554 and 578 cm −1 . [ 25 ] the FWHM of and was 62 and 70 cm −1 , respectively. In Figure 3c, The FWHM of the 7 cm −1 emission line peak of the sample at the and phase was also different.…”

“…For SAMP1 PE , since its paraelectric, these peaks are much less distinctive. [21][22][23][24][25][26] Sharper and stronger peaks along with a decrease in the FWHM of a peak indicate an increase in crystallinity. [28] As we normalize the Raman spectra of SAMP1 FEÀDE and SAMP1 FEÀCC (depicted in Figure 3d,e), we could see a peak shift of 5 cm À1 in the second-order peak at 137 cm À1 and the firstorder peak at 207 cm À1 in SAMP1 FEÀDE (Figure 3d) toward a higher frequency due to their sensitivity to the lattice symmetry and uniformity of the crystal, but no shift in the overtone mode at 835 cm À1 (Figure 3e).…”

Effect of 4He2+ ion irradiation on the optical, electrical, morphological, and structural properties of ZnO thin films

“…It is also feasible to alter the material's surface or an internal region by changing the ion energy, its angle of implantation, or both. This is the main reason why ion irradiation has become an important technique to modify the physical properties of materials and several groups have studied the irradiation of different semiconductors, such as silicon, silicon carbide, germanium, gallium arsenide and in particular ZnO [3,4], by using different ions at different energies and fluences. For instance, Tomic, et al [5] worked with silicon and showed evidence that a 23 MeV I beam can anneal the pre-existing damage of the material's structure.…”